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HM9N70F-VB Product details
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Product Introduction
HM9N70F-VB is a single N-channel MOSFET in TO-220F package with 700V drain-source voltage (VDS) and ±30V gate-source voltage (VGS). This MOSFET uses advanced super junction (SJ) multi-layer epitaxial (Multi-EPI) technology, providing excellent electrical performance and reliability, suitable for high voltage and high efficiency application scenarios.
HM9N70F-VB is a single N-channel MOSFET in TO-220F package with 700V drain-source voltage (VDS) and ±30V gate-source voltage (VGS). This MOSFET uses advanced super junction (SJ) multi-layer epitaxial (Multi-EPI) technology, providing excellent electrical performance and reliability, suitable for high voltage and high efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO-220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: Super junction (SJ) multi-layer epitaxial (Multi-EPI)
- **Package type**: TO-220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: Super junction (SJ) multi-layer epitaxial (Multi-EPI)
Domain and module applications：
Application fields and module examples
HM9N70F-VB MOSFET is widely used in high-voltage power management, industrial automation and home appliances. For example:
1. **Switching Power Supply (SMPS)**: In the switching power supply, HM9N70F-VB can effectively improve the power conversion efficiency and reduce heat loss due to its high withstand voltage and low conduction loss.
2. **Industrial Control Module**: This MOSFET is suitable for various drive circuits and inverter modules in industrial control, especially in high-voltage drive and control systems.
3. **Home Appliances**: In home appliances, such as air conditioners, refrigerators, etc., HM9N70F-VB can be used in its power management and motor control parts to achieve efficient and stable operation.
Through the above characteristics and application scenarios, HM9N70F-VB provides a reliable solution in high-voltage and high-efficiency application requirements.
HM9N70F-VB MOSFET is widely used in high-voltage power management, industrial automation and home appliances. For example:
1. **Switching Power Supply (SMPS)**: In the switching power supply, HM9N70F-VB can effectively improve the power conversion efficiency and reduce heat loss due to its high withstand voltage and low conduction loss.
2. **Industrial Control Module**: This MOSFET is suitable for various drive circuits and inverter modules in industrial control, especially in high-voltage drive and control systems.
3. **Home Appliances**: In home appliances, such as air conditioners, refrigerators, etc., HM9N70F-VB can be used in its power management and motor control parts to achieve efficient and stable operation.
Through the above characteristics and application scenarios, HM9N70F-VB provides a reliable solution in high-voltage and high-efficiency application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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