中文
English
HM9N70D-VB Product details
Back to previous pageProduct introduction：
HM9N70D-VB MOSFET Product Introduction
HM9N70D-VB is a high-voltage unipolar N-channel MOSFET in TO263 package with a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V. It uses Super Junction and Multi-EPI technology, with high voltage tolerance and good switching performance. The on-resistance of this MOSFET is 750mΩ (at VGS=10V) and the maximum continuous drain current (ID) is 7A. The device is designed for applications requiring high efficiency and high reliability, and is suitable for various high-voltage conversion and switching circuits.
HM9N70D-VB is a high-voltage unipolar N-channel MOSFET in TO263 package with a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V. It uses Super Junction and Multi-EPI technology, with high voltage tolerance and good switching performance. The on-resistance of this MOSFET is 750mΩ (at VGS=10V) and the maximum continuous drain current (ID) is 7A. The device is designed for applications requiring high efficiency and high reliability, and is suitable for various high-voltage conversion and switching circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HM9N70D-VB MOSFET Detailed parameter description
- **Package**: TO263
- **Channel configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: Super junction (SJ_Multi-EPI)
- **Package**: TO263
- **Channel configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: Super junction (SJ_Multi-EPI)
Domain and module applications：
Application areas and modules of HM9N70D-VB
1. **Power management module**: HM9N70D-VB is very suitable for primary-side converters in switching power supplies. Such applications require MOSFETs to handle high voltages, have low on-resistance and fast switching speeds. For example, in AC-DC converters, the device can be used for primary-side switches to provide efficient power conversion.
2. **Motor driver**: In high-voltage motor drivers, HM9N70D-VB can be used as a switching element in inverter circuits. Its high-voltage capability and low-loss characteristics enable it to effectively control the operation of motors, making it particularly suitable for motor control modules in industrial automation equipment and large household appliances.
3. **Lighting system**: In LED lighting systems, this MOSFET can be used as a switching component in high-voltage LED drive circuits to ensure system efficiency and stability. Its high withstand voltage characteristics make it suitable for lighting applications that require high reliability, such as street lighting and industrial lighting.
4. **UPS and Voltage Regulator**: In uninterruptible power supply (UPS) and voltage regulator systems, HM9N70D-VB can be used for high voltage inverter and voltage regulator circuits. These applications usually require MOSFETs with high voltage withstand capability and low switching loss to improve the overall efficiency and reliability of the system.
1. **Power management module**: HM9N70D-VB is very suitable for primary-side converters in switching power supplies. Such applications require MOSFETs to handle high voltages, have low on-resistance and fast switching speeds. For example, in AC-DC converters, the device can be used for primary-side switches to provide efficient power conversion.
2. **Motor driver**: In high-voltage motor drivers, HM9N70D-VB can be used as a switching element in inverter circuits. Its high-voltage capability and low-loss characteristics enable it to effectively control the operation of motors, making it particularly suitable for motor control modules in industrial automation equipment and large household appliances.
3. **Lighting system**: In LED lighting systems, this MOSFET can be used as a switching component in high-voltage LED drive circuits to ensure system efficiency and stability. Its high withstand voltage characteristics make it suitable for lighting applications that require high reliability, such as street lighting and industrial lighting.
4. **UPS and Voltage Regulator**: In uninterruptible power supply (UPS) and voltage regulator systems, HM9N70D-VB can be used for high voltage inverter and voltage regulator circuits. These applications usually require MOSFETs with high voltage withstand capability and low switching loss to improve the overall efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
