中文
English
HM8N65F-VB Product details
Back to previous pageProduct introduction：
1. HM8N65F-VB Product Introduction
HM8N65F-VB is a high-voltage single N-channel MOSFET in a TO220F package. It is designed mainly for applications that require high-voltage control capabilities, such as power conversion, lighting, and industrial control equipment. The device has a drain-source voltage (VDS) of 650V and a continuous drain current (ID) capability of up to 7A, enabling it to operate stably under harsh operating conditions. In addition, the turn-on voltage (Vth) of this MOSFET is 3.5V, ensuring reliable turn-on characteristics under normal operating conditions.
HM8N65F-VB is a high-voltage single N-channel MOSFET in a TO220F package. It is designed mainly for applications that require high-voltage control capabilities, such as power conversion, lighting, and industrial control equipment. The device has a drain-source voltage (VDS) of 650V and a continuous drain current (ID) capability of up to 7A, enabling it to operate stably under harsh operating conditions. In addition, the turn-on voltage (Vth) of this MOSFET is 3.5V, ensuring reliable turn-on characteristics under normal operating conditions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. HM8N65F-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Planar MOSFET
- **Package form**: Full plastic package, effectively preventing current leakage and short circuit.
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Planar MOSFET
- **Package form**: Full plastic package, effectively preventing current leakage and short circuit.
Domain and module applications：
3. Application fields and module examples
HM8N65F-VB MOSFET is particularly suitable for high-voltage power conversion due to its high-voltage operation capability and low on-resistance. In power supply modules, the device can be used in AC-DC converters and DC-DC converters to help improve the energy efficiency and reliability of the system. In addition, this MOSFET is often used in industrial control equipment such as motor drivers and high-voltage switching circuits. Due to its planar technology advantages, HM8N65F-VB is also suitable for electronic ballasts in lighting systems, effectively reducing switching losses and improving overall energy efficiency. In the field of new energy, the device can also be used in modules such as photovoltaic inverters to provide stable power conversion functions for solar energy systems.
HM8N65F-VB MOSFET is particularly suitable for high-voltage power conversion due to its high-voltage operation capability and low on-resistance. In power supply modules, the device can be used in AC-DC converters and DC-DC converters to help improve the energy efficiency and reliability of the system. In addition, this MOSFET is often used in industrial control equipment such as motor drivers and high-voltage switching circuits. Due to its planar technology advantages, HM8N65F-VB is also suitable for electronic ballasts in lighting systems, effectively reducing switching losses and improving overall energy efficiency. In the field of new energy, the device can also be used in modules such as photovoltaic inverters to provide stable power conversion functions for solar energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
