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HM8N60S-VB Product details
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HM8N60S-VB is a high-efficiency single N-channel power MOSFET manufactured using advanced super junction multi-epitaxial (SJ_Multi-EPI) technology. The device is packaged in TO252 (DPAK) with compact dimensions and good heat dissipation, suitable for high-density design applications. It has a drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 7A, and can operate stably under high voltage conditions. Its on-resistance (R_DS(ON)) is 700mΩ (at V_GS=10V), ensuring low loss and high-efficiency operation. HM8N60S-VB is ideal for a variety of high-voltage power management and conversion applications, including LED drivers, power adapters, and industrial power systems.
HM8N60S-VB is a high-efficiency single N-channel power MOSFET manufactured using advanced super junction multi-epitaxial (SJ_Multi-EPI) technology. The device is packaged in TO252 (DPAK) with compact dimensions and good heat dissipation, suitable for high-density design applications. It has a drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 7A, and can operate stably under high voltage conditions. Its on-resistance (R_DS(ON)) is 700mΩ (at V_GS=10V), ensuring low loss and high-efficiency operation. HM8N60S-VB is ideal for a variety of high-voltage power management and conversion applications, including LED drivers, power adapters, and industrial power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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1. **Package Type (Package): TO252**
- **Description: **TO252, also known as DPAK, is a surface mount package suitable for high-density PCB design. This package has good heat dissipation and electrical performance, suitable for space-constrained applications that require high power handling.
2. **Configuration (Configuration): Single-N-Channel**
- **Description: **This MOSFET is a single N-channel design, suitable for switching and amplification applications. N-channel devices generally have lower on-resistance and faster switching speeds, making them ideal for efficient power conversion.
3. **Drain-Source Voltage (V_DS): 650V**
- **Description: **This is the maximum drain-to-source voltage that the device can withstand in the off state. The high voltage withstand capability of 650V makes it suitable for high-voltage applications in industrial and grid power supply systems.
4. **Gate-Source Voltage (V_GS): ±30V**
- **Description:** This is the maximum voltage range that the gate can withstand relative to the source. The wide gate-source voltage range provides greater design flexibility and is suitable for different drive circuits.
5. **Threshold Voltage (V_th): 3.5V**
- **Description:** This is the minimum gate-source voltage required for the MOSFET to start turning on. The 3.5V threshold voltage ensures that the device can be effectively turned on at a relatively low drive voltage, which is suitable for lower voltage drive circuits.
6. **On-Resistance (R_DS(ON)): 700mΩ (@V_GS=10V)**
- **Description:** This is the drain-source resistance of the device in the on state, measured at a gate-source voltage of 10V. Lower on-resistance helps reduce power consumption and improve efficiency.
7. **Continuous Drain Current (I_D): 7A**
- **Description: **This is the maximum drain current that the device can carry continuously under certain conditions. The 7A current handling capability is suitable for applications with medium power requirements, such as power adapters and LED drivers.
8. **Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial Technology)**
- **Description: **Superjunction Multi-Epitaxial Technology is an advanced manufacturing process that significantly reduces the on-resistance while maintaining high voltage withstand capability by introducing multiple epitaxial layers in the N-channel. This technology enables MOSFETs to exhibit lower power consumption and higher efficiency in high-voltage applications.
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1. **Package Type (Package): TO252**
- **Description: **TO252, also known as DPAK, is a surface mount package suitable for high-density PCB design. This package has good heat dissipation and electrical performance, suitable for space-constrained applications that require high power handling.
2. **Configuration (Configuration): Single-N-Channel**
- **Description: **This MOSFET is a single N-channel design, suitable for switching and amplification applications. N-channel devices generally have lower on-resistance and faster switching speeds, making them ideal for efficient power conversion.
3. **Drain-Source Voltage (V_DS): 650V**
- **Description: **This is the maximum drain-to-source voltage that the device can withstand in the off state. The high voltage withstand capability of 650V makes it suitable for high-voltage applications in industrial and grid power supply systems.
4. **Gate-Source Voltage (V_GS): ±30V**
- **Description:** This is the maximum voltage range that the gate can withstand relative to the source. The wide gate-source voltage range provides greater design flexibility and is suitable for different drive circuits.
5. **Threshold Voltage (V_th): 3.5V**
- **Description:** This is the minimum gate-source voltage required for the MOSFET to start turning on. The 3.5V threshold voltage ensures that the device can be effectively turned on at a relatively low drive voltage, which is suitable for lower voltage drive circuits.
6. **On-Resistance (R_DS(ON)): 700mΩ (@V_GS=10V)**
- **Description:** This is the drain-source resistance of the device in the on state, measured at a gate-source voltage of 10V. Lower on-resistance helps reduce power consumption and improve efficiency.
7. **Continuous Drain Current (I_D): 7A**
- **Description: **This is the maximum drain current that the device can carry continuously under certain conditions. The 7A current handling capability is suitable for applications with medium power requirements, such as power adapters and LED drivers.
8. **Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial Technology)**
- **Description: **Superjunction Multi-Epitaxial Technology is an advanced manufacturing process that significantly reduces the on-resistance while maintaining high voltage withstand capability by introducing multiple epitaxial layers in the N-channel. This technology enables MOSFETs to exhibit lower power consumption and higher efficiency in high-voltage applications.
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Domain and module applications：
*III. Application fields and module examples of HM8N60S-VB**
HM8N60S-VB power MOSFET is widely used in various power electronic systems that require high voltage and high efficiency, and is suitable for multiple fields and modules.
1. **LED driver**
- In modern lighting systems, LED drivers are key components responsible for converting input voltage into current and voltage suitable for LED lighting. The high withstand voltage and low on-resistance characteristics of HM8N60S-VB make it very suitable for use as a power switch in LED drivers. It can operate stably at high frequencies, ensuring the efficiency and reliability of the drive circuit, extending the service life of LED lighting, and reducing energy consumption.
2. **Power adapters and chargers**
- HM8N60S-VB is suitable for various power adapters and chargers, such as power modules for laptops, tablets, and other portable electronic devices. Its efficient switching performance and low power consumption characteristics enable the power adapter to achieve efficient power conversion with a smaller size and weight, while reducing heat generation and improving charging efficiency.
3. **Industrial Power Systems**
- In industrial power and control systems, HM8N60S-VB can be used as a power switching element to handle power conversion from AC power to DC loads. Its high voltage tolerance and low loss performance enable it to perform well in industrial applications that require high reliability and high efficiency, and is suitable for power converters, regulated power supplies, and industrial automation equipment.
4. **Lighting Ballasts**
- In traditional fluorescent lamp ballasts and modern high-efficiency electronic ballasts, HM8N60S-VB provides stable switching performance and can effectively control current under high-frequency working conditions. Its low on-resistance and high-frequency switching capabilities help reduce power loss, improve the energy efficiency and stability of lighting equipment, and are widely used in commercial and industrial lighting systems.
5. **Renewable Energy Inverter**
- In solar and wind energy systems, inverters require efficient power switches to convert DC power to AC power grid or load use. The high withstand voltage and low loss characteristics of HM8N60S-VB enable it to operate efficiently in these systems, ensuring efficient conversion and stable output of energy, and supporting the efficient use of renewable energy.
6. **Uninterruptible Power Supply (UPS)**
- HM8N60S-VB is suitable for power conversion modules in UPS systems. Its high voltage withstand capability and low conduction loss ensure that the UPS system can quickly switch to backup power in the event of a power failure, and provide stable power support for key equipment, ensuring the continuity and safety of the system.
With its excellent electrical performance and reliability, the HM8N60S-VB power MOSFET provides efficient and stable solutions in multiple key areas, suitable for a variety of applications requiring high voltage, high efficiency and high reliability.
HM8N60S-VB power MOSFET is widely used in various power electronic systems that require high voltage and high efficiency, and is suitable for multiple fields and modules.
1. **LED driver**
- In modern lighting systems, LED drivers are key components responsible for converting input voltage into current and voltage suitable for LED lighting. The high withstand voltage and low on-resistance characteristics of HM8N60S-VB make it very suitable for use as a power switch in LED drivers. It can operate stably at high frequencies, ensuring the efficiency and reliability of the drive circuit, extending the service life of LED lighting, and reducing energy consumption.
2. **Power adapters and chargers**
- HM8N60S-VB is suitable for various power adapters and chargers, such as power modules for laptops, tablets, and other portable electronic devices. Its efficient switching performance and low power consumption characteristics enable the power adapter to achieve efficient power conversion with a smaller size and weight, while reducing heat generation and improving charging efficiency.
3. **Industrial Power Systems**
- In industrial power and control systems, HM8N60S-VB can be used as a power switching element to handle power conversion from AC power to DC loads. Its high voltage tolerance and low loss performance enable it to perform well in industrial applications that require high reliability and high efficiency, and is suitable for power converters, regulated power supplies, and industrial automation equipment.
4. **Lighting Ballasts**
- In traditional fluorescent lamp ballasts and modern high-efficiency electronic ballasts, HM8N60S-VB provides stable switching performance and can effectively control current under high-frequency working conditions. Its low on-resistance and high-frequency switching capabilities help reduce power loss, improve the energy efficiency and stability of lighting equipment, and are widely used in commercial and industrial lighting systems.
5. **Renewable Energy Inverter**
- In solar and wind energy systems, inverters require efficient power switches to convert DC power to AC power grid or load use. The high withstand voltage and low loss characteristics of HM8N60S-VB enable it to operate efficiently in these systems, ensuring efficient conversion and stable output of energy, and supporting the efficient use of renewable energy.
6. **Uninterruptible Power Supply (UPS)**
- HM8N60S-VB is suitable for power conversion modules in UPS systems. Its high voltage withstand capability and low conduction loss ensure that the UPS system can quickly switch to backup power in the event of a power failure, and provide stable power support for key equipment, ensuring the continuity and safety of the system.
With its excellent electrical performance and reliability, the HM8N60S-VB power MOSFET provides efficient and stable solutions in multiple key areas, suitable for a variety of applications requiring high voltage, high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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