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HM8N60F-VB Product details
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Product Introduction
**HM8N60F-VB** is a high-voltage N-Channel MOSFET in TO220F package, designed for high voltage applications. This MOSFET uses Plannar technology and can withstand drain-source voltages up to 650V, suitable for switching and power conversion applications in high voltage environments. Its maximum drain current is 7A, with high voltage resistance and reliability, suitable for electronic devices and systems requiring high voltage tolerance.
**HM8N60F-VB** is a high-voltage N-Channel MOSFET in TO220F package, designed for high voltage applications. This MOSFET uses Plannar technology and can withstand drain-source voltages up to 650V, suitable for switching and power conversion applications in high voltage environments. Its maximum drain current is 7A, with high voltage resistance and reliability, suitable for electronic devices and systems requiring high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
**HM8N60F-VB**'s high withstand voltage and moderate on-resistance enable it to perform well in multiple high voltage applications:
1. **Power management**: In high voltage DC-DC converters and AC-DC adapters, HM8N60F-VB can be used as the main switch, providing reliable switching performance and power conversion under high voltage conditions to ensure the stability of the power system.
2. **Power amplifier**: In high voltage power amplifier circuits, this MOSFET can handle high voltage signals while maintaining low switching losses, making it suitable for power amplifier applications that require high withstand voltage.
3. **Inverter**: In solar inverters and other high voltage inverter applications, HM8N60F-VB can be used for high voltage DC to AC conversion, and its high withstand voltage capability and stability ensure efficient operation of the inverter.
4. **Motor drive**: In high voltage motor drive systems, such as large industrial motor drives, the HM8N60F-VB can withstand high voltages while supporting efficient operation of motor control circuits to ensure motor drive reliability.
5. **High voltage switch**: In high voltage switch modules, the HM8N60F-VB can be used as a high voltage switch element, suitable for load control and current switching in high voltage environments.
This MOSFET is designed to provide excellent performance in high voltage and high power applications, especially for those applications that require high voltage resistance and high reliability.
**HM8N60F-VB**'s high withstand voltage and moderate on-resistance enable it to perform well in multiple high voltage applications:
1. **Power management**: In high voltage DC-DC converters and AC-DC adapters, HM8N60F-VB can be used as the main switch, providing reliable switching performance and power conversion under high voltage conditions to ensure the stability of the power system.
2. **Power amplifier**: In high voltage power amplifier circuits, this MOSFET can handle high voltage signals while maintaining low switching losses, making it suitable for power amplifier applications that require high withstand voltage.
3. **Inverter**: In solar inverters and other high voltage inverter applications, HM8N60F-VB can be used for high voltage DC to AC conversion, and its high withstand voltage capability and stability ensure efficient operation of the inverter.
4. **Motor drive**: In high voltage motor drive systems, such as large industrial motor drives, the HM8N60F-VB can withstand high voltages while supporting efficient operation of motor control circuits to ensure motor drive reliability.
5. **High voltage switch**: In high voltage switch modules, the HM8N60F-VB can be used as a high voltage switch element, suitable for load control and current switching in high voltage environments.
This MOSFET is designed to provide excellent performance in high voltage and high power applications, especially for those applications that require high voltage resistance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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