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HM8N60BF-VB Product details
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HM8N60BF-VB is a high-performance single N-channel power MOSFET manufactured using advanced planar process technology, with excellent electrical performance and reliable quality assurance. The device is packaged in TO220F, has excellent heat dissipation performance and mechanical stability, and is suitable for various high-voltage and high-power applications.
HM8N60BF-VB is a high-performance single N-channel power MOSFET manufactured using advanced planar process technology, with excellent electrical performance and reliable quality assurance. The device is packaged in TO220F, has excellent heat dissipation performance and mechanical stability, and is suitable for various high-voltage and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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1. **Package Type (Package): TO220F**
- **Description: **TO220F is a fully enclosed plastic package with excellent heat dissipation and electrical insulation characteristics. This package is suitable for applications that require high power handling capabilities and good thermal management, while providing a safe operating environment to prevent accidental electrical contact.
2. **Configuration (Configuration): Single-N-Channel**
- **Description: **This device is a single N-channel MOSFET, mainly used in switching and amplification applications. N-channel devices generally have lower on-resistance and faster switching speeds, suitable for high-efficiency power conversion and control applications.
3. **Drain-Source Voltage (V_DS): 650V**
- **Description: **This is the maximum drain-to-source voltage that the device can withstand in the off state. The high withstand voltage of 650V enables this MOSFET to operate safely in high voltage applications such as industrial power supplies and high voltage converters.
4. **Gate-Source Voltage (V_GS): ±30V**
- **Description:** This is the maximum voltage range that the gate can withstand relative to the source. The wide range of ±30V provides a larger selection of drive voltages, enhancing the compatibility and flexibility of the device in different control circuits.
5. **Threshold Voltage (V_th): 3.5V**
- **Description:** This is the minimum gate-source voltage required for the MOSFET to start conducting. The threshold voltage of 3.5V ensures that the device can be effectively controlled at a lower drive voltage, which is suitable for low voltage control systems.
6. **On-Resistance (R_DS(ON)): 830mΩ (@V_GS=10V)**
- **Description:** This is the drain-source resistance of the device in the on state, measured under the gate-source voltage of 10V. Lower on-resistance means lower conduction losses, which helps improve overall system efficiency and reduce heat generation.
7. **Continuous Drain Current (I_D): 10A**
- **Description: **This is the maximum drain current that the device can carry continuously under specific conditions. The 10A current handling capability enables this MOSFET to meet high-power demand applications such as motor drives and high-power power supplies.
8. **Technology: Planar**
- **Description: **Planar technology is a mature and reliable semiconductor manufacturing technology with good electrical performance and stability. MOSFETs using planar technology typically have consistent characteristics and high reliability, suitable for a variety of industrial and consumer electronics applications.
**
1. **Package Type (Package): TO220F**
- **Description: **TO220F is a fully enclosed plastic package with excellent heat dissipation and electrical insulation characteristics. This package is suitable for applications that require high power handling capabilities and good thermal management, while providing a safe operating environment to prevent accidental electrical contact.
2. **Configuration (Configuration): Single-N-Channel**
- **Description: **This device is a single N-channel MOSFET, mainly used in switching and amplification applications. N-channel devices generally have lower on-resistance and faster switching speeds, suitable for high-efficiency power conversion and control applications.
3. **Drain-Source Voltage (V_DS): 650V**
- **Description: **This is the maximum drain-to-source voltage that the device can withstand in the off state. The high withstand voltage of 650V enables this MOSFET to operate safely in high voltage applications such as industrial power supplies and high voltage converters.
4. **Gate-Source Voltage (V_GS): ±30V**
- **Description:** This is the maximum voltage range that the gate can withstand relative to the source. The wide range of ±30V provides a larger selection of drive voltages, enhancing the compatibility and flexibility of the device in different control circuits.
5. **Threshold Voltage (V_th): 3.5V**
- **Description:** This is the minimum gate-source voltage required for the MOSFET to start conducting. The threshold voltage of 3.5V ensures that the device can be effectively controlled at a lower drive voltage, which is suitable for low voltage control systems.
6. **On-Resistance (R_DS(ON)): 830mΩ (@V_GS=10V)**
- **Description:** This is the drain-source resistance of the device in the on state, measured under the gate-source voltage of 10V. Lower on-resistance means lower conduction losses, which helps improve overall system efficiency and reduce heat generation.
7. **Continuous Drain Current (I_D): 10A**
- **Description: **This is the maximum drain current that the device can carry continuously under specific conditions. The 10A current handling capability enables this MOSFET to meet high-power demand applications such as motor drives and high-power power supplies.
8. **Technology: Planar**
- **Description: **Planar technology is a mature and reliable semiconductor manufacturing technology with good electrical performance and stability. MOSFETs using planar technology typically have consistent characteristics and high reliability, suitable for a variety of industrial and consumer electronics applications.
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Domain and module applications：
3. Application fields and module examples of HM8N60BF-VB**
HM8N60BF-VB power MOSFET performs well in a wide range of applications, meeting various high voltage and high power requirements.
1. **Switching Power Supply (SMPS)**
- In modern electronic devices, switching power supplies are widely used for efficient power conversion. The high withstand voltage and low on-resistance characteristics of HM8N60BF-VB make it an ideal choice for the main power switch of the switching power supply. It can work stably at high frequencies, ensuring the stability and efficiency of the power supply output, while reducing energy loss and heat generation, and improving the reliability of the overall system.
2. **Motor drive and control system**
- In industrial automation and household appliances, motor drive is a key component. HM8N60BF-VB can be used in various motor control modules, such as DC motor drivers and inverters. Its high current handling capability and fast switching characteristics enable it to precisely control the speed and torque of the motor, improve the system's response speed and energy efficiency, and meet a variety of complex motion control needs.
3. **Lighting systems**
- In applications such as high-voltage LED lighting and fluorescent lamp ballasts, the HM8N60BF-VB can be used as an efficient switching element to provide stable current control and energy management. Its excellent electrical performance ensures that the lighting system has a longer life and higher energy efficiency, adapting to a variety of commercial and industrial lighting environments.
4. **Renewable energy systems**
- In solar inverters and wind energy conversion systems, the performance of power semiconductor devices directly affects the efficiency and stability of the entire system. The HM8N60BF-VB is suitable for these high-voltage and high-power conversion applications, and can effectively process energy obtained from renewable energy sources, convert and transmit it to the power grid or energy storage devices, and promote the efficient use of clean energy.
5. **Industrial control and automation equipment**
- In various industrial control modules, such as power regulators, temperature controllers and process control systems, HM8N60BF-VB provides a reliable power switching solution. Its stable performance and high reliability ensure that industrial equipment continues to operate efficiently in complex and harsh working environments, reducing maintenance costs and downtime.
6. **Power adapters and chargers**
- For power adapters and chargers for laptops, power tools and mobile devices, HM8N60BF-VB can provide efficient power conversion and voltage regulation. Its low loss and high switching speed help reduce the size and weight of the adapter, while improving charging efficiency, meeting the needs of portable electronic devices for fast charging and high efficiency.
In summary, the HM8N60BF-VB power MOSFET, with its excellent electrical performance and reliability, is widely used in various power electronic applications requiring high voltage, high efficiency and high reliability, providing design engineers with flexible and efficient solutions.
HM8N60BF-VB power MOSFET performs well in a wide range of applications, meeting various high voltage and high power requirements.
1. **Switching Power Supply (SMPS)**
- In modern electronic devices, switching power supplies are widely used for efficient power conversion. The high withstand voltage and low on-resistance characteristics of HM8N60BF-VB make it an ideal choice for the main power switch of the switching power supply. It can work stably at high frequencies, ensuring the stability and efficiency of the power supply output, while reducing energy loss and heat generation, and improving the reliability of the overall system.
2. **Motor drive and control system**
- In industrial automation and household appliances, motor drive is a key component. HM8N60BF-VB can be used in various motor control modules, such as DC motor drivers and inverters. Its high current handling capability and fast switching characteristics enable it to precisely control the speed and torque of the motor, improve the system's response speed and energy efficiency, and meet a variety of complex motion control needs.
3. **Lighting systems**
- In applications such as high-voltage LED lighting and fluorescent lamp ballasts, the HM8N60BF-VB can be used as an efficient switching element to provide stable current control and energy management. Its excellent electrical performance ensures that the lighting system has a longer life and higher energy efficiency, adapting to a variety of commercial and industrial lighting environments.
4. **Renewable energy systems**
- In solar inverters and wind energy conversion systems, the performance of power semiconductor devices directly affects the efficiency and stability of the entire system. The HM8N60BF-VB is suitable for these high-voltage and high-power conversion applications, and can effectively process energy obtained from renewable energy sources, convert and transmit it to the power grid or energy storage devices, and promote the efficient use of clean energy.
5. **Industrial control and automation equipment**
- In various industrial control modules, such as power regulators, temperature controllers and process control systems, HM8N60BF-VB provides a reliable power switching solution. Its stable performance and high reliability ensure that industrial equipment continues to operate efficiently in complex and harsh working environments, reducing maintenance costs and downtime.
6. **Power adapters and chargers**
- For power adapters and chargers for laptops, power tools and mobile devices, HM8N60BF-VB can provide efficient power conversion and voltage regulation. Its low loss and high switching speed help reduce the size and weight of the adapter, while improving charging efficiency, meeting the needs of portable electronic devices for fast charging and high efficiency.
In summary, the HM8N60BF-VB power MOSFET, with its excellent electrical performance and reliability, is widely used in various power electronic applications requiring high voltage, high efficiency and high reliability, providing design engineers with flexible and efficient solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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