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HM8822E-VB Product details
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HM8822E-VB MOSFET Product Introduction
HM8822E-VB is a high-performance N-Channel MOSFET packaged in TSSOP8 and configured as a common drain. It has a drain-source withstand voltage (V_DS) of 20V and is suitable for use in medium and low voltage environments. Its threshold voltage (V_th) ranges from 0.5V to 1.5V, allowing it to be turned on at a low gate voltage. The on-resistance (R_DS(ON)) is 18mΩ (V_GS = 2.5V) and 14mΩ (V_GS = 4.5V), respectively, providing low power loss and high efficiency performance. HM8822E-VB uses Trench technology and is suitable for applications that require high switching speeds and low on-resistance.
HM8822E-VB is a high-performance N-Channel MOSFET packaged in TSSOP8 and configured as a common drain. It has a drain-source withstand voltage (V_DS) of 20V and is suitable for use in medium and low voltage environments. Its threshold voltage (V_th) ranges from 0.5V to 1.5V, allowing it to be turned on at a low gate voltage. The on-resistance (R_DS(ON)) is 18mΩ (V_GS = 2.5V) and 14mΩ (V_GS = 4.5V), respectively, providing low power loss and high efficiency performance. HM8822E-VB uses Trench technology and is suitable for applications that require high switching speeds and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Model**: HM8822E-VB
- **Package**: TSSOP8
- **Configuration**: Common source N+N-Channel
- **Drain-source withstand voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±12V
- **Threshold voltage (V_th)**: 0.5V ~ 1.5V
- **On-resistance (R_DS(ON))**:
- 18mΩ @ V_GS = 2.5V
- 14mΩ @ V_GS = 4.5V
- **Drain current (ID)**: 7.6A
- **Technology**: Trench
- **Model**: HM8822E-VB
- **Package**: TSSOP8
- **Configuration**: Common source N+N-Channel
- **Drain-source withstand voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±12V
- **Threshold voltage (V_th)**: 0.5V ~ 1.5V
- **On-resistance (R_DS(ON))**:
- 18mΩ @ V_GS = 2.5V
- 14mΩ @ V_GS = 4.5V
- **Drain current (ID)**: 7.6A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Low voltage switching applications**: The low drain-source withstand voltage (20V) and low on-resistance of the HM8822E-VB make it ideal for low voltage switching applications. For example, in consumer electronics, this MOSFET can be used as a power switch to control the flow of current in low voltage circuits.
2. **Power management modules**: Due to its low on-resistance and high switching speed, the HM8822E-VB is suitable for efficient switching in power management modules. This includes as a switching element in DC-DC converters, helping to improve conversion efficiency and stability.
3. **Load switch**: In load switch applications that require fast switching and low power consumption, such as mobile phones, tablets and other portable devices, the HM8822E-VB is able to provide efficient switching performance, reduce power consumption and extend device battery life.
4. **LED drive**: The low on-resistance of this MOSFET makes it suitable for use in LED drive circuits, especially in applications that require high efficiency and low power consumption. It can be used to drive low-voltage LEDs to ensure stable brightness output.
5. **Small motor drive**: HM8822E-VB can also be used in small motor drive applications, such as in home appliances and consumer electronics. Due to its high switching speed and low power consumption characteristics, it is able to provide efficient motor control.
1. **Low voltage switching applications**: The low drain-source withstand voltage (20V) and low on-resistance of the HM8822E-VB make it ideal for low voltage switching applications. For example, in consumer electronics, this MOSFET can be used as a power switch to control the flow of current in low voltage circuits.
2. **Power management modules**: Due to its low on-resistance and high switching speed, the HM8822E-VB is suitable for efficient switching in power management modules. This includes as a switching element in DC-DC converters, helping to improve conversion efficiency and stability.
3. **Load switch**: In load switch applications that require fast switching and low power consumption, such as mobile phones, tablets and other portable devices, the HM8822E-VB is able to provide efficient switching performance, reduce power consumption and extend device battery life.
4. **LED drive**: The low on-resistance of this MOSFET makes it suitable for use in LED drive circuits, especially in applications that require high efficiency and low power consumption. It can be used to drive low-voltage LEDs to ensure stable brightness output.
5. **Small motor drive**: HM8822E-VB can also be used in small motor drive applications, such as in home appliances and consumer electronics. Due to its high switching speed and low power consumption characteristics, it is able to provide efficient motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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