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HM8820E-VB Product details
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HM8820E-VB MOSFET Product Introduction
HM8820E-VB is a high-performance N-type power MOSFET packaged as TSSOP8. This MOSFET has a common drain configuration and uses Trench technology, designed to handle drain-source voltages up to 20V. With low threshold voltage and extremely low on-resistance, HM8820E-VB is suitable for applications requiring high efficiency and high switching speed. This makes it perform well in a variety of low-voltage, high-current applications, making it an ideal choice for modern electronic devices.
HM8820E-VB is a high-performance N-type power MOSFET packaged as TSSOP8. This MOSFET has a common drain configuration and uses Trench technology, designed to handle drain-source voltages up to 20V. With low threshold voltage and extremely low on-resistance, HM8820E-VB is suitable for applications requiring high efficiency and high switching speed. This makes it perform well in a variety of low-voltage, high-current applications, making it an ideal choice for modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
HM8820E-VB Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage(VDS)**: 20V
- **Gate-source voltage(VGS)**: ±12V
- **Threshold voltage(Vth)**: 0.5~1.5V
- **On-resistance(RDS(ON))**:
- 18mΩ @ VGS=2.5V
- 14mΩ @ VGS=4.5V
- **Continuous drain current(ID)**: 7.6A
- **Technology**: Trench
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage(VDS)**: 20V
- **Gate-source voltage(VGS)**: ±12V
- **Threshold voltage(Vth)**: 0.5~1.5V
- **On-resistance(RDS(ON))**:
- 18mΩ @ VGS=2.5V
- 14mΩ @ VGS=4.5V
- **Continuous drain current(ID)**: 7.6A
- **Technology**: Trench
Domain and module applications：
HM8820E-VB applicable fields and module application examples
1. **DC-DC converter**: In DC-DC converters, HM8820E-VB MOSFET can be used as a switching element to handle high currents in low voltage applications. Its low on-resistance and high switching speed help improve conversion efficiency and reduce energy loss, and is suitable for devices such as laptops and mobile phone chargers.
2. **Power management system**: In various power management systems, HM8820E-VB can be used for power switching and current control applications, and can provide stable performance and high efficiency under high current conditions, suitable for battery management and power modules.
3. **Electric vehicle (EV) drive system**: In the drive system of electric vehicles, HM8820E-VB MOSFET can be used for motor control and power switching, capable of handling high current demands while maintaining low power consumption and high efficiency.
4. **High-efficiency LED driver**: In high-efficiency LED drivers, HM8820E-VB can be used for switching and current regulation to help control the brightness and power output of LEDs, and is suitable for applications such as LED lamps and displays.
1. **DC-DC converter**: In DC-DC converters, HM8820E-VB MOSFET can be used as a switching element to handle high currents in low voltage applications. Its low on-resistance and high switching speed help improve conversion efficiency and reduce energy loss, and is suitable for devices such as laptops and mobile phone chargers.
2. **Power management system**: In various power management systems, HM8820E-VB can be used for power switching and current control applications, and can provide stable performance and high efficiency under high current conditions, suitable for battery management and power modules.
3. **Electric vehicle (EV) drive system**: In the drive system of electric vehicles, HM8820E-VB MOSFET can be used for motor control and power switching, capable of handling high current demands while maintaining low power consumption and high efficiency.
4. **High-efficiency LED driver**: In high-efficiency LED drivers, HM8820E-VB can be used for switching and current regulation to help control the brightness and power output of LEDs, and is suitable for applications such as LED lamps and displays.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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