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HM8810B-VB Product details
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HM8810B-VB MOSFET Product Introduction
HM8810B-VB is a high-performance N-channel MOSFET in TSSOP8 package configured as a common drain pin (Common Drain). Designed for low-voltage applications, this MOSFET has a maximum drain-source voltage (VDS) of 20V, making it ideal for applications that require high current and low on-resistance. Manufactured using Trench technology, it excels in switching efficiency and conduction performance. When the gate-source voltage (VGS) of HM8810B-VB is 2.5V and 4.5V, the on-resistance (RDS(ON)) is 18mΩ and 14mΩ respectively, and the maximum drain current (ID) reaches 7.6A, which can meet the needs of a variety of low-voltage, high-current applications.
HM8810B-VB is a high-performance N-channel MOSFET in TSSOP8 package configured as a common drain pin (Common Drain). Designed for low-voltage applications, this MOSFET has a maximum drain-source voltage (VDS) of 20V, making it ideal for applications that require high current and low on-resistance. Manufactured using Trench technology, it excels in switching efficiency and conduction performance. When the gate-source voltage (VGS) of HM8810B-VB is 2.5V and 4.5V, the on-resistance (RDS(ON)) is 18mΩ and 14mΩ respectively, and the maximum drain current (ID) reaches 7.6A, which can meet the needs of a variety of low-voltage, high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
HM8810B-VB MOSFET Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Common source pin N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=2.5V
- 14mΩ @ VGS=4.5V
- **Drain current (ID)**: 7.6A
- **Technology**: Trench
- **Switching speed**: Fast, suitable for high frequency switching applications
- **Thermal performance**: Designed for low voltage environment with good heat dissipation capability
- **Package type**: TSSOP8
- **Configuration**: Common source pin N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=2.5V
- 14mΩ @ VGS=4.5V
- **Drain current (ID)**: 7.6A
- **Technology**: Trench
- **Switching speed**: Fast, suitable for high frequency switching applications
- **Thermal performance**: Designed for low voltage environment with good heat dissipation capability
Domain and module applications：
HM8810B-VB MOSFET Application Fields and Module Examples
1. **Low Voltage DC-DC Converter**: HM8810B-VB performs well in low voltage DC-DC converters. Due to its low on-resistance and high current handling capability, this MOSFET can effectively improve conversion efficiency and reduce power loss, making the power conversion process more efficient.
2. **Battery Management System**: In the battery management system, HM8810B-VB can stably control the battery charging and discharging process, handle large current flows, while maintaining high efficiency and system safety.
3. **Switching Power Supply**: This MOSFET is suitable for various switching power supply modules, especially in low voltage applications. Its fast switching capability and low on-resistance help improve the overall efficiency of the power supply and reduce energy losses.
4. **Motor drive**: In small motor drive applications (such as power tools, toy motors, etc.), HM8810B-VB can provide stable current control, ensure efficient and stable operation of the motor, and extend the service life of the equipment.
With its excellent switching performance and low on-resistance, HM8810B-VB is suitable for various low-voltage, high-current applications, providing efficient and reliable current control solutions.
1. **Low Voltage DC-DC Converter**: HM8810B-VB performs well in low voltage DC-DC converters. Due to its low on-resistance and high current handling capability, this MOSFET can effectively improve conversion efficiency and reduce power loss, making the power conversion process more efficient.
2. **Battery Management System**: In the battery management system, HM8810B-VB can stably control the battery charging and discharging process, handle large current flows, while maintaining high efficiency and system safety.
3. **Switching Power Supply**: This MOSFET is suitable for various switching power supply modules, especially in low voltage applications. Its fast switching capability and low on-resistance help improve the overall efficiency of the power supply and reduce energy losses.
4. **Motor drive**: In small motor drive applications (such as power tools, toy motors, etc.), HM8810B-VB can provide stable current control, ensure efficient and stable operation of the motor, and extend the service life of the equipment.
With its excellent switching performance and low on-resistance, HM8810B-VB is suitable for various low-voltage, high-current applications, providing efficient and reliable current control solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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