HM85P02K-VB Product details
Product introduction:
HM85P02K-VB is a high-performance single-channel P-type MOSFET in TO252 package. It is designed for high current and high power applications, with a drain-source voltage (VDS) of up to -30V and a gate-source voltage (VGS) of ±20V. The gate threshold voltage (Vth) of this MOSFET is -3V, which is suitable for operation at lower gate voltages. HM85P02K-VB uses Trench technology, and the on-resistance (RDS(ON)) in the on state is 7mΩ (at VGS=4.5V) and 5mΩ (at VGS=10V), respectively, and can carry a continuous drain current (ID) of up to -100A. This design enables HM85P02K-VB to perform well in applications requiring high current and high power, and is particularly suitable for high-efficiency switching and power management applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Package type**: TO252
- **Configuration**: Single P-type channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: -100A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications:
HM85P02K-VB MOSFET is suitable for multiple high power and high current applications due to its high current carrying capability and low on-resistance. Here are some specific application areas and module examples:
1. **Power Management System**: Due to its low on-resistance and high current capability, HM85P02K-VB is very suitable for use as a high-efficiency switching element in power management modules, such as switches in DC-DC converters, to help improve system efficiency and reduce energy loss.
2. **Electric Vehicle**: In the power control and drive system of electric vehicles, HM85P02K-VB can be used as a switching element to handle high current loads, ensuring high efficiency and stability of the system.
3. **Industrial Motor Drive**: In industrial motor drive systems that require high current control, such as servo motors and inverters, HM85P02K-VB can be used as a high power switch to provide stable current regulation and high efficiency operation.
4. **Power amplifier**: In power amplifier applications, this MOSFET can be used as a switching element to handle high-power signals and improve the overall performance and reliability of the amplifier.
5. **High current switching applications**: In various high current switching applications, such as high-power relay driving and power switching, the high current handling capability and low on-resistance characteristics of the HM85P02K-VB provide reliable switching capabilities to ensure stable operation of the system.
Technical support:
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