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HM840F-VB Product details
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HM840F-VB MOSFET Product Introduction
**HM840F-VB** is a high voltage, high withstand voltage single N-channel MOSFET packaged in TO220F. This MOSFET uses Plannar technology and is designed to handle high voltage applications. It has a maximum drain-source voltage of 650V and a maximum continuous drain current of 10A. Its on-resistance is 830mΩ (VGS = 10V), and it can still provide reliable switching performance under high voltage. HM840F-VB is suitable for high voltage and medium current applications, and can maintain stable operating performance in a variety of harsh environments.
**HM840F-VB** is a high voltage, high withstand voltage single N-channel MOSFET packaged in TO220F. This MOSFET uses Plannar technology and is designed to handle high voltage applications. It has a maximum drain-source voltage of 650V and a maximum continuous drain current of 10A. Its on-resistance is 830mΩ (VGS = 10V), and it can still provide reliable switching performance under high voltage. HM840F-VB is suitable for high voltage and medium current applications, and can maintain stable operating performance in a variety of harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ (VGS = 10V)
- **Maximum continuous drain current (ID)**: 10A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ (VGS = 10V)
- **Maximum continuous drain current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**: The high drain-source voltage of the HM840F-VB makes it suitable for high-voltage power switch applications. In particular, in AC-DC converters and high-voltage DC power supplies, this MOSFET is able to stably switch high-voltage loads while maintaining a low on-resistance.
2. **Electric vehicle charging system**: In the charging system of electric vehicles, the HM840F-VB can handle the high-voltage charging process, ensuring the safety and efficiency of the charging process. Its high withstand voltage characteristics are suitable for use in chargers and battery management systems.
3. **Industrial power modules**: For power modules in industrial applications, such as power inverters and high-voltage motor drives, the HM840F-VB provides a stable high-voltage switching solution. It is used in these modules to control and regulate high-voltage power supplies.
4. **High-voltage power amplifier**: In high-voltage power amplifier applications, the HM840F-VB is able to handle high-voltage power outputs and is suitable for radio transmitters and other devices that require high-voltage drive.
In summary, HM840F-VB MOSFET is widely used in high-voltage power switches, electric vehicle charging, industrial power modules and high-voltage power amplifiers due to its high voltage tolerance and stable performance.
1. **High-voltage power switch**: The high drain-source voltage of the HM840F-VB makes it suitable for high-voltage power switch applications. In particular, in AC-DC converters and high-voltage DC power supplies, this MOSFET is able to stably switch high-voltage loads while maintaining a low on-resistance.
2. **Electric vehicle charging system**: In the charging system of electric vehicles, the HM840F-VB can handle the high-voltage charging process, ensuring the safety and efficiency of the charging process. Its high withstand voltage characteristics are suitable for use in chargers and battery management systems.
3. **Industrial power modules**: For power modules in industrial applications, such as power inverters and high-voltage motor drives, the HM840F-VB provides a stable high-voltage switching solution. It is used in these modules to control and regulate high-voltage power supplies.
4. **High-voltage power amplifier**: In high-voltage power amplifier applications, the HM840F-VB is able to handle high-voltage power outputs and is suitable for radio transmitters and other devices that require high-voltage drive.
In summary, HM840F-VB MOSFET is widely used in high-voltage power switches, electric vehicle charging, industrial power modules and high-voltage power amplifiers due to its high voltage tolerance and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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