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HM830I-VB Product details
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HM830I-VB MOSFET Product Introduction
HM830I-VB is a high-voltage N-Channel MOSFET packaged in TO251, designed for switching and amplification applications in high-voltage environments. It has a drain-source withstand voltage (V_DS) of 650V and can withstand high voltage and operate stably. Its on-resistance (R_DS(ON)) is 950mΩ, suitable for applications requiring medium current. HM830I-VB uses SJ_Multi-EPI technology to provide good voltage and thermal stability to ensure reliability under high-voltage operation. This MOSFET is an ideal choice for high-voltage power switches, power inverters, and industrial control systems.
HM830I-VB is a high-voltage N-Channel MOSFET packaged in TO251, designed for switching and amplification applications in high-voltage environments. It has a drain-source withstand voltage (V_DS) of 650V and can withstand high voltage and operate stably. Its on-resistance (R_DS(ON)) is 950mΩ, suitable for applications requiring medium current. HM830I-VB uses SJ_Multi-EPI technology to provide good voltage and thermal stability to ensure reliability under high-voltage operation. This MOSFET is an ideal choice for high-voltage power switches, power inverters, and industrial control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: HM830I-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 950mΩ @ V_GS = 10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: HM830I-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 950mΩ @ V_GS = 10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**: The high drain-source withstand voltage (650V) of the HM830I-VB makes it ideal for use as a high-voltage power switch. It can be used in high-voltage power converters and power supply units to switch under high voltage conditions, ensuring stable system operation and reducing power consumption.
2. **Power inverter**: In solar inverters and other power inverters, the high voltage capability of this MOSFET enables it to handle high-voltage DC to AC conversion. It can operate stably under high voltage conditions to ensure high efficiency and reliability of the inverter.
3. **Industrial power management**: The HM830I-VB is suitable for industrial power management systems, especially in scenarios where high-voltage switch control is required. It can be used in high-voltage motor drives, power distribution systems and other equipment to provide reliable switching functions.
4. **Battery management system**: In electric vehicles and large energy storage systems, this MOSFET can be used in battery management systems. Its high voltage withstand capability and stable performance help ensure safe and efficient management of battery packs.
5. **High Voltage Switchgear**: HM830I-VB is suitable for various high voltage switchgear, such as high voltage power switches and power distribution systems. Its reliability and stability in high voltage environments make it an ideal choice for these applications.
1. **High-voltage power switch**: The high drain-source withstand voltage (650V) of the HM830I-VB makes it ideal for use as a high-voltage power switch. It can be used in high-voltage power converters and power supply units to switch under high voltage conditions, ensuring stable system operation and reducing power consumption.
2. **Power inverter**: In solar inverters and other power inverters, the high voltage capability of this MOSFET enables it to handle high-voltage DC to AC conversion. It can operate stably under high voltage conditions to ensure high efficiency and reliability of the inverter.
3. **Industrial power management**: The HM830I-VB is suitable for industrial power management systems, especially in scenarios where high-voltage switch control is required. It can be used in high-voltage motor drives, power distribution systems and other equipment to provide reliable switching functions.
4. **Battery management system**: In electric vehicles and large energy storage systems, this MOSFET can be used in battery management systems. Its high voltage withstand capability and stable performance help ensure safe and efficient management of battery packs.
5. **High Voltage Switchgear**: HM830I-VB is suitable for various high voltage switchgear, such as high voltage power switches and power distribution systems. Its reliability and stability in high voltage environments make it an ideal choice for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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