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HM830F-VB Product details
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HM830F-VB MOSFET Product Introduction
HM830F-VB is a high current N-type power MOSFET packaged in TO220F. Using Trench technology, this MOSFET can handle drain-source voltages up to 30V and provide extremely low on-resistance. This makes it particularly suitable for high current applications, able to maintain low power consumption and high efficiency under high current conditions. HM830F-VB is an ideal choice for power management, power switching and high current applications, providing reliable switching performance and excellent thermal management.
HM830F-VB is a high current N-type power MOSFET packaged in TO220F. Using Trench technology, this MOSFET can handle drain-source voltages up to 30V and provide extremely low on-resistance. This makes it particularly suitable for high current applications, able to maintain low power consumption and high efficiency under high current conditions. HM830F-VB is an ideal choice for power management, power switching and high current applications, providing reliable switching performance and excellent thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 30V | 1.7V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 30V | 1.7V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 30V | 1.7V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
HM830F-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage(VDS)**: 30V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1.7V
- **On-resistance(RDS(ON))**:
- 5mΩ @ VGS=4.5V
- 4mΩ @ VGS=10V
- **Continuous drain current(ID)**: 140A
- **Technology**: Trench
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage(VDS)**: 30V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1.7V
- **On-resistance(RDS(ON))**:
- 5mΩ @ VGS=4.5V
- 4mΩ @ VGS=10V
- **Continuous drain current(ID)**: 140A
- **Technology**: Trench
Domain and module applications：
HM830F-VB applicable fields and module application examples
1. **High current power switch**: In high current power switch applications, HM830F-VB can handle currents up to 140A while maintaining extremely low on-resistance. This makes it ideal for power switch modules that require high current control and high efficiency, such as power supplies and battery management systems.
2. **Electric vehicle (EV) drive system**: In the motor drive system of electric vehicles, HM830F-VB can be used for high current motor control, providing stable performance in high power environments, optimizing the driving efficiency and battery life of electric vehicles.
3. **Power converter**: In high power power converters, HM830F-VB MOSFET is used as a switching element to handle high current requirements in the power conversion process, ensuring high efficiency and stability of power conversion, and is suitable for industrial power conversion equipment and high power power modules.
4. **Power Amplifier**: In power amplifier applications, HM830F-VB can be used for switching control of high-power signals, helping to optimize signal transmission efficiency and reduce energy loss. It is suitable for wireless communication equipment and broadcasting systems that require high current handling capabilities.
1. **High current power switch**: In high current power switch applications, HM830F-VB can handle currents up to 140A while maintaining extremely low on-resistance. This makes it ideal for power switch modules that require high current control and high efficiency, such as power supplies and battery management systems.
2. **Electric vehicle (EV) drive system**: In the motor drive system of electric vehicles, HM830F-VB can be used for high current motor control, providing stable performance in high power environments, optimizing the driving efficiency and battery life of electric vehicles.
3. **Power converter**: In high power power converters, HM830F-VB MOSFET is used as a switching element to handle high current requirements in the power conversion process, ensuring high efficiency and stability of power conversion, and is suitable for industrial power conversion equipment and high power power modules.
4. **Power Amplifier**: In power amplifier applications, HM830F-VB can be used for switching control of high-power signals, helping to optimize signal transmission efficiency and reduce energy loss. It is suitable for wireless communication equipment and broadcasting systems that require high current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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