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HM80N08K-VB Product details
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Product Introduction
**HM80N08K-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for applications requiring high current and low on-resistance. This MOSFET uses Trench technology, has excellent switching characteristics and extremely low on-resistance, and can provide efficient and stable performance in high current applications. Its maximum drain-source voltage is 80V and the maximum drain current is 75A, which is very suitable for high current density power management and power conversion applications.
**HM80N08K-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for applications requiring high current and low on-resistance. This MOSFET uses Trench technology, has excellent switching characteristics and extremely low on-resistance, and can provide efficient and stable performance in high current applications. Its maximum drain-source voltage is 80V and the maximum drain current is 75A, which is very suitable for high current density power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
**HM80N08K-VB**’s low on-resistance and high current carrying capability enable it to excel in multiple high-performance applications:
1. **Power Management**: In high-efficiency power management systems, such as DC-DC converters and power supply modules, HM80N08K-VB is used as a main switch or synchronous rectifier, which can significantly reduce switching losses and improve energy efficiency.
2. **Electric Vehicle**: Suitable for battery management systems and electric drive systems in electric vehicles, this MOSFET can withstand high currents while ensuring high efficiency and stability during battery charging and discharging.
3. **Motor Drive**: In motor drive applications, such as brushless DC motor (BLDC) drives, HM80N08K-VB can be used as a power switch, and its high current handling capability and low on-resistance help improve motor efficiency.
4. **Industrial Automation**: In industrial automation equipment, this MOSFET can be used to control current loads and drive motors. Its high current handling capability and low on-resistance ensure system reliability and efficiency.
5. **High Power Inverter**: In solar inverters and other high power inverters, the low RDS(ON) of HM80N08K-VB can effectively improve power conversion efficiency, handle high power DC, and meet the needs of high efficiency and high stability.
The design of this MOSFET optimizes performance in high current applications and is particularly suitable for power supplies and drive systems that require high efficiency, high reliability and high current handling capability.
**HM80N08K-VB**’s low on-resistance and high current carrying capability enable it to excel in multiple high-performance applications:
1. **Power Management**: In high-efficiency power management systems, such as DC-DC converters and power supply modules, HM80N08K-VB is used as a main switch or synchronous rectifier, which can significantly reduce switching losses and improve energy efficiency.
2. **Electric Vehicle**: Suitable for battery management systems and electric drive systems in electric vehicles, this MOSFET can withstand high currents while ensuring high efficiency and stability during battery charging and discharging.
3. **Motor Drive**: In motor drive applications, such as brushless DC motor (BLDC) drives, HM80N08K-VB can be used as a power switch, and its high current handling capability and low on-resistance help improve motor efficiency.
4. **Industrial Automation**: In industrial automation equipment, this MOSFET can be used to control current loads and drive motors. Its high current handling capability and low on-resistance ensure system reliability and efficiency.
5. **High Power Inverter**: In solar inverters and other high power inverters, the low RDS(ON) of HM80N08K-VB can effectively improve power conversion efficiency, handle high power DC, and meet the needs of high efficiency and high stability.
The design of this MOSFET optimizes performance in high current applications and is particularly suitable for power supplies and drive systems that require high efficiency, high reliability and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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