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HM80N03KA-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
HM80N03KA-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low resistance applications. Manufactured using advanced Trench technology, this MOSFET has extremely low on-resistance and high current carrying capacity, making it excellent in high-performance applications. The HM80N03KA-VB is able to achieve high switching efficiency at low gate drive voltage, making it ideal for demanding circuits such as power management and motor control.
HM80N03KA-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low resistance applications. Manufactured using advanced Trench technology, this MOSFET has extremely low on-resistance and high current carrying capacity, making it excellent in high-performance applications. The HM80N03KA-VB is able to achieve high switching efficiency at low gate drive voltage, making it ideal for demanding circuits such as power management and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Model**: HM80N03KA-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: HM80N03KA-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
HM80N03KA-VB MOSFET is widely used in many fields due to its extremely low on-resistance and high current capability. The following are some typical applications:
1. **Power management**: In switching power supplies (SMPS) and DC-DC converters, HM80N03KA-VB can effectively reduce power loss and improve conversion efficiency. Its low RDS(ON) and high current capability make it very suitable for high power density power supply design, improving the overall efficiency of the system.
2. **Motor drive**: In electric vehicles, power tools and other motor control systems, the high current carrying capacity and low on-resistance of this MOSFET make it an ideal choice for motor drive circuits. It can provide stable driving performance and reduce switching losses.
3. **High-frequency switching applications**: In circuits that require high switching frequencies, such as communication equipment and switch-mode power supplies, HM80N03KA-VB can achieve efficient switching operations. Its low on-resistance and fast switching characteristics make it suitable for high-frequency, high-efficiency power conversion and signal processing applications.
In summary, the HM80N03KA-VB has demonstrated excellent performance in power management, motor drive, and high-frequency switching applications with its low on-resistance and high current capability, and is an important component in high-efficiency and high-reliability circuit design.
HM80N03KA-VB MOSFET is widely used in many fields due to its extremely low on-resistance and high current capability. The following are some typical applications:
1. **Power management**: In switching power supplies (SMPS) and DC-DC converters, HM80N03KA-VB can effectively reduce power loss and improve conversion efficiency. Its low RDS(ON) and high current capability make it very suitable for high power density power supply design, improving the overall efficiency of the system.
2. **Motor drive**: In electric vehicles, power tools and other motor control systems, the high current carrying capacity and low on-resistance of this MOSFET make it an ideal choice for motor drive circuits. It can provide stable driving performance and reduce switching losses.
3. **High-frequency switching applications**: In circuits that require high switching frequencies, such as communication equipment and switch-mode power supplies, HM80N03KA-VB can achieve efficient switching operations. Its low on-resistance and fast switching characteristics make it suitable for high-frequency, high-efficiency power conversion and signal processing applications.
In summary, the HM80N03KA-VB has demonstrated excellent performance in power management, motor drive, and high-frequency switching applications with its low on-resistance and high current capability, and is an important component in high-efficiency and high-reliability circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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