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HM7N65I-VB Product details
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1. HM7N65I-VB Product Introduction
HM7N65I-VB is a high-voltage N-channel power MOSFET in TO251 package, designed for high voltage and medium current applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the gate-source voltage (VGS) can reach ±30V. The turn-on voltage (Vth) is 3.5V, ensuring that the MOSFET can be effectively turned on at a lower gate-source voltage. The on-resistance (RDS(ON)) of HM7N65I-VB is 950mΩ (at VGS=10V), and it can support a continuous drain current (ID) of up to 5A. It uses SJ_Multi-EPI (multi-layer EPI) technology, which provides excellent electrical performance and thermal stability, and is suitable for switching and power control applications in high voltage environments.
HM7N65I-VB is a high-voltage N-channel power MOSFET in TO251 package, designed for high voltage and medium current applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the gate-source voltage (VGS) can reach ±30V. The turn-on voltage (Vth) is 3.5V, ensuring that the MOSFET can be effectively turned on at a lower gate-source voltage. The on-resistance (RDS(ON)) of HM7N65I-VB is 950mΩ (at VGS=10V), and it can support a continuous drain current (ID) of up to 5A. It uses SJ_Multi-EPI (multi-layer EPI) technology, which provides excellent electrical performance and thermal stability, and is suitable for switching and power control applications in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. HM7N65I-VB Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Maximum power consumption**: Suitable for medium power switching applications
- **Operating temperature range**: -55°C to +175°C
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Maximum power consumption**: Suitable for medium power switching applications
- **Operating temperature range**: -55°C to +175°C
Domain and module applications：
3. Application fields and modules of HM7N65I-VB
HM7N65I-VB MOSFET is suitable for the following fields and modules due to its high withstand voltage and stable switching performance:
1. **High-voltage power switch**: HM7N65I-VB can withstand drain-source voltage up to 650V, making it very suitable for high-voltage power switch applications, such as high-voltage power modules and power converters. Its good conduction performance and low on-resistance can effectively improve the efficiency and reliability of the system.
2. **Industrial converter**: In the industrial field, this MOSFET can be used in high-voltage DC to AC (DC-AC) or AC to DC (AC-DC) converters. Its high voltage withstand capability and medium current handling capability make it perform well in handling high-voltage current conversion tasks.
3. **Power electronic equipment**: HM7N65I-VB is suitable for switching circuits in power electronic equipment, such as power factor correction (PFC) circuits and power conditioning modules. Its stable switching performance and high voltage resistance enable it to operate reliably in harsh working environments.
4. **Inverter**: This MOSFET is also suitable for applications such as solar inverters and wind inverters. Due to its ability to handle high voltages and stable switching performance, it can efficiently convert DC to AC, ensuring efficient operation of the inverter.
5. **Automotive Electronics**: In the field of automotive electronics, the HM7N65I-VB can be used in the power control system and battery management system of electric vehicles. Its high voltage resistance and stable performance can ensure reliability and safety in automotive electrical systems.
The high voltage resistance, stable switching characteristics and good electrical performance of the HM7N65I-VB enable it to excel in a variety of high voltage and medium current applications.
HM7N65I-VB MOSFET is suitable for the following fields and modules due to its high withstand voltage and stable switching performance:
1. **High-voltage power switch**: HM7N65I-VB can withstand drain-source voltage up to 650V, making it very suitable for high-voltage power switch applications, such as high-voltage power modules and power converters. Its good conduction performance and low on-resistance can effectively improve the efficiency and reliability of the system.
2. **Industrial converter**: In the industrial field, this MOSFET can be used in high-voltage DC to AC (DC-AC) or AC to DC (AC-DC) converters. Its high voltage withstand capability and medium current handling capability make it perform well in handling high-voltage current conversion tasks.
3. **Power electronic equipment**: HM7N65I-VB is suitable for switching circuits in power electronic equipment, such as power factor correction (PFC) circuits and power conditioning modules. Its stable switching performance and high voltage resistance enable it to operate reliably in harsh working environments.
4. **Inverter**: This MOSFET is also suitable for applications such as solar inverters and wind inverters. Due to its ability to handle high voltages and stable switching performance, it can efficiently convert DC to AC, ensuring efficient operation of the inverter.
5. **Automotive Electronics**: In the field of automotive electronics, the HM7N65I-VB can be used in the power control system and battery management system of electric vehicles. Its high voltage resistance and stable performance can ensure reliability and safety in automotive electrical systems.
The high voltage resistance, stable switching characteristics and good electrical performance of the HM7N65I-VB enable it to excel in a variety of high voltage and medium current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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