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HM7N60K-VB Product details
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HM7N60K-VB MOSFET Product Introduction
**HM7N60K-VB** is a high voltage, high withstand voltage single N-channel MOSFET in TO252 package. This MOSFET adopts SJ_Multi-EPI technology and is designed for applications requiring high voltage and medium current. Its maximum drain-source voltage is up to 650V and its maximum continuous drain current is 7A, which is suitable for stable operation in high voltage environments. Despite the on-resistance of 700mΩ, this still shows good performance in high voltage applications. The threshold voltage of this MOSFET is 3.5V, ensuring good switching performance and efficient power control.
**HM7N60K-VB** is a high voltage, high withstand voltage single N-channel MOSFET in TO252 package. This MOSFET adopts SJ_Multi-EPI technology and is designed for applications requiring high voltage and medium current. Its maximum drain-source voltage is up to 650V and its maximum continuous drain current is 7A, which is suitable for stable operation in high voltage environments. Despite the on-resistance of 700mΩ, this still shows good performance in high voltage applications. The threshold voltage of this MOSFET is 3.5V, ensuring good switching performance and efficient power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ (VGS = 10V)
- **Maximum continuous drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ (VGS = 10V)
- **Maximum continuous drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**: The high drain-source voltage of the HM7N60K-VB makes it suitable for high-voltage power switch applications. In power management systems, this MOSFET can handle high-voltage loads and provide stable power switching functions, especially for AC-DC converters and high-voltage DC power supplies.
2. **Electric vehicle charger**: In electric vehicle chargers, the HM7N60K-VB is able to handle the switching needs under high voltage conditions, ensuring the safety and reliability of the charging process. Its high withstand voltage characteristics enable stable operation when charging the battery.
3. **Industrial power module**: For industrial power modules, such as power inverters or motor drives, the HM7N60K-VB is able to handle high voltage and medium current applications. It provides reliable switching and power control functions in these applications.
4. **High-voltage switching power supply**: In high-voltage switching power supplies, the HM7N60K-VB is able to serve as the main switching element and handle high voltages of 650V. Its stable performance and voltage resistance ensure the high efficiency and reliability of the power supply.
In general, HM7N60K-VB MOSFET is widely used in high-voltage power management, high-voltage charging and industrial power modules due to its high voltage resistance and stable performance.
1. **High-voltage power switch**: The high drain-source voltage of the HM7N60K-VB makes it suitable for high-voltage power switch applications. In power management systems, this MOSFET can handle high-voltage loads and provide stable power switching functions, especially for AC-DC converters and high-voltage DC power supplies.
2. **Electric vehicle charger**: In electric vehicle chargers, the HM7N60K-VB is able to handle the switching needs under high voltage conditions, ensuring the safety and reliability of the charging process. Its high withstand voltage characteristics enable stable operation when charging the battery.
3. **Industrial power module**: For industrial power modules, such as power inverters or motor drives, the HM7N60K-VB is able to handle high voltage and medium current applications. It provides reliable switching and power control functions in these applications.
4. **High-voltage switching power supply**: In high-voltage switching power supplies, the HM7N60K-VB is able to serve as the main switching element and handle high voltages of 650V. Its stable performance and voltage resistance ensure the high efficiency and reliability of the power supply.
In general, HM7N60K-VB MOSFET is widely used in high-voltage power management, high-voltage charging and industrial power modules due to its high voltage resistance and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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