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HM7N60I-VB Product details
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1. Product Introduction
HM7N60I-VB is a high voltage single N-channel MOSFET with a TO251 package type. It uses SJ_Multi-EPI technology, which provides excellent high voltage resistance and low on-resistance through a multi-layer surface extension structure. HM7N60I-VB is mainly designed for power conversion and switching applications that require high voltage resistance and reliability, especially in high voltage environments. It has a higher drain voltage (VDS) and lower on-resistance, enabling it to maintain good switching performance and thermal stability in high voltage applications.
HM7N60I-VB is a high voltage single N-channel MOSFET with a TO251 package type. It uses SJ_Multi-EPI technology, which provides excellent high voltage resistance and low on-resistance through a multi-layer surface extension structure. HM7N60I-VB is mainly designed for power conversion and switching applications that require high voltage resistance and reliability, especially in high voltage environments. It has a higher drain voltage (VDS) and lower on-resistance, enabling it to maintain good switching performance and thermal stability in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
- **Model**: HM7N60I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (Multi-layer surface extension technology)
- **Model**: HM7N60I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (Multi-layer surface extension technology)
Domain and module applications：
3. Application fields and module examples
HM7N60I-VB MOSFET is widely used in the following fields and modules, demonstrating its high voltage handling capability and reliability:
1. **High voltage power converter**: In power adapters, industrial power supplies and UPS systems, HM7N60I-VB can effectively handle high voltage inputs due to its high drain-source voltage capability of 650V, while ensuring stable output current and low conduction loss, ensuring high efficiency and reliability of the system.
2. **Inverter application**: In renewable energy systems such as photovoltaic inverters and wind inverters, the high voltage tolerance and low on-resistance of HM7N60I-VB enable it to handle high voltage inputs from photovoltaic panels or wind turbines, providing efficient power conversion and stable performance.
3. **High-voltage switch circuit**: In high-voltage switchgear and motor drive systems, HM7N60I-VB can work stably under high voltage conditions. Its excellent switching characteristics and thermal stability make it suitable for use in high-voltage motor starting and control circuits.
In summary, the high voltage tolerance and excellent switching performance of HM7N60I-VB make it perform well in high-voltage power management, inverter applications, and high-voltage switch circuits. It is a key component with high efficiency and high reliability in these fields.
HM7N60I-VB MOSFET is widely used in the following fields and modules, demonstrating its high voltage handling capability and reliability:
1. **High voltage power converter**: In power adapters, industrial power supplies and UPS systems, HM7N60I-VB can effectively handle high voltage inputs due to its high drain-source voltage capability of 650V, while ensuring stable output current and low conduction loss, ensuring high efficiency and reliability of the system.
2. **Inverter application**: In renewable energy systems such as photovoltaic inverters and wind inverters, the high voltage tolerance and low on-resistance of HM7N60I-VB enable it to handle high voltage inputs from photovoltaic panels or wind turbines, providing efficient power conversion and stable performance.
3. **High-voltage switch circuit**: In high-voltage switchgear and motor drive systems, HM7N60I-VB can work stably under high voltage conditions. Its excellent switching characteristics and thermal stability make it suitable for use in high-voltage motor starting and control circuits.
In summary, the high voltage tolerance and excellent switching performance of HM7N60I-VB make it perform well in high-voltage power management, inverter applications, and high-voltage switch circuits. It is a key component with high efficiency and high reliability in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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