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HM7N60D-VB Product details
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HM7N60D-VB MOSFET Product Introduction
HM7N60D-VB is a high voltage N-Channel MOSFET in TO251 package, designed for high voltage and medium current applications. The drain-source withstand voltage (V_DS) of this MOSFET is 650V, suitable for stable operation in high voltage environments. Its on-resistance (R_DS(ON)) is 700mΩ, ensuring low power loss during switching. Using SJ_Multi-EPI technology, this MOSFET provides excellent voltage and temperature stability. HM7N60D-VB is particularly suitable for high voltage switching, power conversion and industrial applications.
HM7N60D-VB is a high voltage N-Channel MOSFET in TO251 package, designed for high voltage and medium current applications. The drain-source withstand voltage (V_DS) of this MOSFET is 650V, suitable for stable operation in high voltage environments. Its on-resistance (R_DS(ON)) is 700mΩ, ensuring low power loss during switching. Using SJ_Multi-EPI technology, this MOSFET provides excellent voltage and temperature stability. HM7N60D-VB is particularly suitable for high voltage switching, power conversion and industrial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: HM7N60D-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 700mΩ @ V_GS = 10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Model**: HM7N60D-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 700mΩ @ V_GS = 10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**: The high V_DS (650V) of the HM7N60D-VB makes it an excellent performer in high-voltage power switch applications. It is suitable for high-voltage power converters and power supply units, and can reliably switch high-voltage currents to ensure system stability and efficiency.
2. **Power inverter**: In solar inverters and other power inverters, the high voltage withstand capability of this MOSFET makes it suitable for DC to AC conversion applications. It can operate stably in high voltage environments, ensuring efficient conversion performance of the inverter.
3. **Industrial control**: The HM7N60D-VB is suitable for use in industrial control systems, especially in application scenarios that require high voltage control. For example, in high-voltage motor drives and industrial power control, it can provide reliable switching functions.
4. **Battery management system**: In electric vehicles or large-scale energy storage systems, this MOSFET can be used in battery management systems. Due to its high voltage withstand capability and stability, it is able to ensure the safety and effective control of the battery pack.
5. **High Voltage Switchgear**: Due to its high drain-source withstand voltage capability, the HM7N60D-VB is suitable for various high voltage switchgear such as high voltage power switches and power distribution systems, which can operate stably under high voltage conditions and reduce power loss.
1. **High-voltage power switch**: The high V_DS (650V) of the HM7N60D-VB makes it an excellent performer in high-voltage power switch applications. It is suitable for high-voltage power converters and power supply units, and can reliably switch high-voltage currents to ensure system stability and efficiency.
2. **Power inverter**: In solar inverters and other power inverters, the high voltage withstand capability of this MOSFET makes it suitable for DC to AC conversion applications. It can operate stably in high voltage environments, ensuring efficient conversion performance of the inverter.
3. **Industrial control**: The HM7N60D-VB is suitable for use in industrial control systems, especially in application scenarios that require high voltage control. For example, in high-voltage motor drives and industrial power control, it can provide reliable switching functions.
4. **Battery management system**: In electric vehicles or large-scale energy storage systems, this MOSFET can be used in battery management systems. Due to its high voltage withstand capability and stability, it is able to ensure the safety and effective control of the battery pack.
5. **High Voltage Switchgear**: Due to its high drain-source withstand voltage capability, the HM7N60D-VB is suitable for various high voltage switchgear such as high voltage power switches and power distribution systems, which can operate stably under high voltage conditions and reduce power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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