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HM75N80D-VB Product details
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HM75N80D-VB MOSFET Product Introduction
HM75N80D-VB is a high-performance single-channel N-type MOSFET in TO263 package, designed for high current and high voltage applications. Its drain-source voltage (VDS) reaches 80V, and the gate-source voltage (VGS) can reach ±20V, meeting the needs of a variety of high-voltage applications. The gate threshold voltage (Vth) of the device is 3V, which ensures stable switching at a lower gate voltage. HM75N80D-VB uses advanced Trench technology to make its on-resistance (RDS(ON)) in the on state extremely low, 10mΩ (at VGS=4.5V) and 6mΩ (at VGS=10V), respectively, and can carry up to 120A of continuous drain current (ID). This design makes it excel in applications requiring high power and high current.
HM75N80D-VB is a high-performance single-channel N-type MOSFET in TO263 package, designed for high current and high voltage applications. Its drain-source voltage (VDS) reaches 80V, and the gate-source voltage (VGS) can reach ±20V, meeting the needs of a variety of high-voltage applications. The gate threshold voltage (Vth) of the device is 3V, which ensures stable switching at a lower gate voltage. HM75N80D-VB uses advanced Trench technology to make its on-resistance (RDS(ON)) in the on state extremely low, 10mΩ (at VGS=4.5V) and 6mΩ (at VGS=10V), respectively, and can carry up to 120A of continuous drain current (ID). This design makes it excel in applications requiring high power and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HM75N80D-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO263
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Applications and module examples
HM75N80D-VB MOSFET is widely used in various high-power and high-current applications due to its high current and low on-resistance characteristics. Here are some specific application areas and module examples:
1. **High-power switching power supply**: The low on-resistance of this MOSFET makes it very suitable for use as the main switching element in high-power switching power supplies, improving the energy efficiency of the power supply and reducing power losses.
2. **Electric vehicle drive system**: In the motor control and power management of electric vehicles, HM75N80D-VB can be used as a switching element to handle high current loads and improve the overall performance and reliability of the system.
3. **Industrial motor drive**: In industrial applications such as servo motors and inverters, HM75N80D-VB can be used as a high-current switching element to ensure precise current control and high-efficiency operation.
4. **Power amplifier**: In power amplifiers that need to process high-power signals, this MOSFET can be used as a switching element to help reduce power loss and improve amplifier efficiency.
5. **High-power LED driver**: In high-power LED drive circuits, the high current handling capability and low on-resistance of the HM75N80D-VB help improve drive efficiency and extend the life of the LED.
HM75N80D-VB MOSFET is widely used in various high-power and high-current applications due to its high current and low on-resistance characteristics. Here are some specific application areas and module examples:
1. **High-power switching power supply**: The low on-resistance of this MOSFET makes it very suitable for use as the main switching element in high-power switching power supplies, improving the energy efficiency of the power supply and reducing power losses.
2. **Electric vehicle drive system**: In the motor control and power management of electric vehicles, HM75N80D-VB can be used as a switching element to handle high current loads and improve the overall performance and reliability of the system.
3. **Industrial motor drive**: In industrial applications such as servo motors and inverters, HM75N80D-VB can be used as a high-current switching element to ensure precise current control and high-efficiency operation.
4. **Power amplifier**: In power amplifiers that need to process high-power signals, this MOSFET can be used as a switching element to help reduce power loss and improve amplifier efficiency.
5. **High-power LED driver**: In high-power LED drive circuits, the high current handling capability and low on-resistance of the HM75N80D-VB help improve drive efficiency and extend the life of the LED.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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