Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. HM70N75-VB Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Maximum power consumption**: Efficient heat dissipation design
- **Operating temperature range**: -55°C to +175°C
Domain and module applications:
3. Application fields and modules of HM70N75-VB
HM70N75-VB MOSFET is suitable for multiple application fields and modules due to its high current carrying capacity, low on-resistance and excellent switching characteristics, including but not limited to the following:
1. **Power management module**: Due to its low on-resistance and efficient power management capabilities, this MOSFET is very suitable for DC-DC converters, switching power supplies (SMPS) and battery management systems to provide stable voltage and current control.
2. **Motor drive**: In motor drive applications, HM70N75-VB can be used to control high-current motors such as industrial motors and electric vehicle drives because it can provide fast switching speeds and efficient current management.
3. **Automotive electronics**: HM70N75-VB is suitable for use in automotive electronic devices such as power distribution modules, on-board chargers and power control systems for electric vehicles, thanks to its reliable performance under high temperature and high current conditions.
4. **Solar Inverter**: The high current capability and high efficiency of this MOSFET make it an ideal choice for use in solar inverters, helping to improve energy conversion efficiency and reduce power losses.
The wide applicability of the HM70N75-VB makes it a key component in modern power electronics systems, suitable for a variety of high-power, high-efficiency application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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