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HM6N70K-VB Product details
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Product Introduction - HM6N70K-VB MOSFET
The HM6N70K-VB is a single N-channel MOSFET in a TO-252 package, designed for high voltage applications. It features a drain-source voltage (VDS) of up to 700V and a gate-source voltage (VGS) of ±30V. This MOSFET uses SJ_Multi-EPI technology, which combines multi-layer silicon epitaxial technology to improve its high voltage performance. At a gate drive voltage of 10V, the HM6N70K-VB has an on-resistance (RDS(ON)) of 2400mΩ and can support a continuous drain current (ID) of up to 2A. This MOSFET is suitable for applications requiring high voltage and medium current handling, providing reliable switching and control performance.
The HM6N70K-VB is a single N-channel MOSFET in a TO-252 package, designed for high voltage applications. It features a drain-source voltage (VDS) of up to 700V and a gate-source voltage (VGS) of ±30V. This MOSFET uses SJ_Multi-EPI technology, which combines multi-layer silicon epitaxial technology to improve its high voltage performance. At a gate drive voltage of 10V, the HM6N70K-VB has an on-resistance (RDS(ON)) of 2400mΩ and can support a continuous drain current (ID) of up to 2A. This MOSFET is suitable for applications requiring high voltage and medium current handling, providing reliable switching and control performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter Description
1. **Package Type**: TO-252
- **Package Description**: TO-252 is a surface mount package with good heat dissipation and compact design, suitable for medium power MOSFET applications.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFETs excel in switching and amplification applications, with low RDS(ON) and high switching speed, suitable for high voltage and medium current applications.
3. **Drain-Source Voltage (VDS)**: 700V
- **Description**: The 700V drain-source voltage enables this MOSFET to handle high voltage applications, suitable for high voltage switching and power management systems.
4. **Gate-Source Voltage (VGS)**: ±30V
- **Description**: The ±30V gate-source voltage range provides greater flexibility, suitable for different gate drive conditions, and meets various control requirements.
5. **Threshold voltage (Vth)**: 3.5V
- **Description**: The threshold voltage of 3.5V means that the MOSFET will only turn on when the gate voltage is higher, which is suitable for applications that require a higher trigger voltage.
6. **On-resistance (RDS(ON))**:
- **2400mΩ@VGS=10V**
- **Description**: Higher on-resistance will cause certain power loss, but it can provide stable switching performance in high voltage applications.
7. **Drain current (ID)**: 2A
- **Description**: The 2A drain current capability makes this MOSFET suitable for medium current loads, providing reliable switching and control functions.
8. **Technology Type**: SJ_Multi-EPI (Multi-layer Silicon Epitaxy Technology)
- **Description**: SJ_Multi-EPI technology improves the high voltage performance of MOSFET through multi-layer silicon epitaxy, making it have excellent performance in high voltage applications.
1. **Package Type**: TO-252
- **Package Description**: TO-252 is a surface mount package with good heat dissipation and compact design, suitable for medium power MOSFET applications.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFETs excel in switching and amplification applications, with low RDS(ON) and high switching speed, suitable for high voltage and medium current applications.
3. **Drain-Source Voltage (VDS)**: 700V
- **Description**: The 700V drain-source voltage enables this MOSFET to handle high voltage applications, suitable for high voltage switching and power management systems.
4. **Gate-Source Voltage (VGS)**: ±30V
- **Description**: The ±30V gate-source voltage range provides greater flexibility, suitable for different gate drive conditions, and meets various control requirements.
5. **Threshold voltage (Vth)**: 3.5V
- **Description**: The threshold voltage of 3.5V means that the MOSFET will only turn on when the gate voltage is higher, which is suitable for applications that require a higher trigger voltage.
6. **On-resistance (RDS(ON))**:
- **2400mΩ@VGS=10V**
- **Description**: Higher on-resistance will cause certain power loss, but it can provide stable switching performance in high voltage applications.
7. **Drain current (ID)**: 2A
- **Description**: The 2A drain current capability makes this MOSFET suitable for medium current loads, providing reliable switching and control functions.
8. **Technology Type**: SJ_Multi-EPI (Multi-layer Silicon Epitaxy Technology)
- **Description**: SJ_Multi-EPI technology improves the high voltage performance of MOSFET through multi-layer silicon epitaxy, making it have excellent performance in high voltage applications.
Domain and module applications：
Applications and modules
1. **High voltage power switch**:
HM6N70K-VB is ideal for high voltage power switch applications such as high voltage DC-DC converters and power management systems. Its 700V drain-source voltage enables it to handle high voltage applications and provide reliable switching control.
2. **Power amplifier**:
In power amplifier circuits, this MOSFET can be used as a switching element to handle high voltage signals, ensure stable power output, and improve the overall efficiency of the system.
3. **Inverter**:
HM6N70K-VB is suitable for inverter circuits, especially in inverter designs that require high voltage handling, such as solar inverters and power converters, to provide efficient power conversion and control.
4. **Power protection**:
In power protection circuits, this MOSFET can be used as a high voltage protection switch to prevent the impact of overvoltage or overcurrent, and improve the safety and reliability of the circuit.
5. **Industrial Control**:
In industrial control systems, such as motor drive and high-voltage load control, this MOSFET can provide a switching solution for high-voltage loads to ensure system stability and reliability.
Through the detailed description of the above parameters and application areas, the HM6N70K-VB MOSFET demonstrates its wide applicability and excellent performance in high-voltage and medium-current applications.
1. **High voltage power switch**:
HM6N70K-VB is ideal for high voltage power switch applications such as high voltage DC-DC converters and power management systems. Its 700V drain-source voltage enables it to handle high voltage applications and provide reliable switching control.
2. **Power amplifier**:
In power amplifier circuits, this MOSFET can be used as a switching element to handle high voltage signals, ensure stable power output, and improve the overall efficiency of the system.
3. **Inverter**:
HM6N70K-VB is suitable for inverter circuits, especially in inverter designs that require high voltage handling, such as solar inverters and power converters, to provide efficient power conversion and control.
4. **Power protection**:
In power protection circuits, this MOSFET can be used as a high voltage protection switch to prevent the impact of overvoltage or overcurrent, and improve the safety and reliability of the circuit.
5. **Industrial Control**:
In industrial control systems, such as motor drive and high-voltage load control, this MOSFET can provide a switching solution for high-voltage loads to ensure system stability and reliability.
Through the detailed description of the above parameters and application areas, the HM6N70K-VB MOSFET demonstrates its wide applicability and excellent performance in high-voltage and medium-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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