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HM6803-VB Product details
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Product Introduction
HM6803-VB is a dual-channel P+P channel power MOSFET packaged in SOT23-6. This MOSFET uses advanced trench technology and is designed to provide efficient switching performance and low on-resistance. Its -20V withstand voltage capability and -4A current handling capability make it particularly suitable for low-voltage, high-density integrated circuit applications.
HM6803-VB is a dual-channel P+P channel power MOSFET packaged in SOT23-6. This MOSFET uses advanced trench technology and is designed to provide efficient switching performance and low on-resistance. Its -20V withstand voltage capability and -4A current handling capability make it particularly suitable for low-voltage, high-density integrated circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Package type**: SOT23-6
- **Polarity configuration**: Dual P-channel (P+P)
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Turning threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS = 2.5V; 75mΩ @ VGS = 4.5V
- **Drain current (ID)**: -4A
- **Technology type**: Trench technology
- **Package type**: SOT23-6
- **Polarity configuration**: Dual P-channel (P+P)
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Turning threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS = 2.5V; 75mΩ @ VGS = 4.5V
- **Drain current (ID)**: -4A
- **Technology type**: Trench technology
Domain and module applications：
Applications and modules
HM6803-VB MOSFET performs well in the following areas and modules:
1. **Load switch**: Due to its low on-resistance and high current handling capability, HM6803-VB is very suitable for load switch applications. It can effectively control the switching of low-voltage loads, reduce power consumption and improve system efficiency.
2. **Power management**: In power management systems, such as DC-DC converters and power protection circuits, this MOSFET can be used as a switching element to achieve efficient power conversion and protection. Its low on-resistance enables it to achieve good performance in high-density power modules.
3. **Battery management system**: HM6803-VB can be used in battery protection switches and balancing circuits in battery management systems. Its low switching loss and good current handling capability can effectively protect the battery and extend its service life.
4. **Portable devices**: In mobile phones, tablets and other portable devices, the compact SOT23-6 package of HM6803-VB makes it suitable for high-density layout designs. It can provide efficient switching performance and stability in these small devices.
5. **Motor drive**: In small motor drive circuits, HM6803-VB can provide stable switching control, suitable for motor drive applications in power tools and consumer electronics, ensuring efficient operation of the motor.
HM6803-VB MOSFET performs well in the following areas and modules:
1. **Load switch**: Due to its low on-resistance and high current handling capability, HM6803-VB is very suitable for load switch applications. It can effectively control the switching of low-voltage loads, reduce power consumption and improve system efficiency.
2. **Power management**: In power management systems, such as DC-DC converters and power protection circuits, this MOSFET can be used as a switching element to achieve efficient power conversion and protection. Its low on-resistance enables it to achieve good performance in high-density power modules.
3. **Battery management system**: HM6803-VB can be used in battery protection switches and balancing circuits in battery management systems. Its low switching loss and good current handling capability can effectively protect the battery and extend its service life.
4. **Portable devices**: In mobile phones, tablets and other portable devices, the compact SOT23-6 package of HM6803-VB makes it suitable for high-density layout designs. It can provide efficient switching performance and stability in these small devices.
5. **Motor drive**: In small motor drive circuits, HM6803-VB can provide stable switching control, suitable for motor drive applications in power tools and consumer electronics, ensuring efficient operation of the motor.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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