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HM6801-VB Product details
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HM6801-VB MOSFET Product Introduction
HM6801-VB is a high-performance bipolar MOSFET in SOT23-6 package. It includes two P-channel MOSFETs (P+P-Channel), which are suitable for low-voltage and miniaturized electronic designs. The MOSFET has a maximum drain-source withstand voltage (VDS) of -20V and a gate-source withstand voltage (VGS) of ±12V. Its gate threshold voltage (Vth) is -0.6V, and its on-resistance (RDS(ON)) is 100mΩ @ VGS=2.5V and 75mΩ @ VGS=4.5V, and it can handle a maximum drain current (ID) of -4A. HM6801-VB uses Trench technology to provide high efficiency and low on-resistance in a compact package.
HM6801-VB is a high-performance bipolar MOSFET in SOT23-6 package. It includes two P-channel MOSFETs (P+P-Channel), which are suitable for low-voltage and miniaturized electronic designs. The MOSFET has a maximum drain-source withstand voltage (VDS) of -20V and a gate-source withstand voltage (VGS) of ±12V. Its gate threshold voltage (Vth) is -0.6V, and its on-resistance (RDS(ON)) is 100mΩ @ VGS=2.5V and 75mΩ @ VGS=4.5V, and it can handle a maximum drain current (ID) of -4A. HM6801-VB uses Trench technology to provide high efficiency and low on-resistance in a compact package.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
HM6801-VB MOSFET Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Dual P-channel (P+P-Channel)
- **Drain-source withstand voltage (VDS)**: -20V
- **Gate-source withstand voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Maximum continuous drain current (ID)**: -4A
- **Technology**: Trench
- **Package type**: SOT23-6
- **Configuration**: Dual P-channel (P+P-Channel)
- **Drain-source withstand voltage (VDS)**: -20V
- **Gate-source withstand voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Maximum continuous drain current (ID)**: -4A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples of HM6801-VB
HM6801-VB is very suitable for the following application scenarios due to its dual P-channel configuration and low on-resistance:
1. **Load switch control**: In various electronic devices, HM6801-VB can be used for load switch control, especially in small battery-powered devices. Its low on-resistance and high switching efficiency enable it to effectively control load current while saving space.
2. **Power management module**: In power management modules, this MOSFET can be used as a switch for low-voltage power supplies for battery management and power conversion circuits. Its high efficiency and low RDS(ON) can reduce energy loss and improve the overall efficiency of the power system.
3. **Small electric devices**: In small electric devices such as portable electronic products and handheld tools, HM6801-VB can be used as a switch or driver device to manage current and control power output. Its small SOT23-6 package is ideal for space-constrained applications.
These applications demonstrate the importance of the HM6801-VB in miniaturization and high-efficiency applications, providing reliable switching functionality while meeting the size and performance requirements of modern electronic designs.
HM6801-VB is very suitable for the following application scenarios due to its dual P-channel configuration and low on-resistance:
1. **Load switch control**: In various electronic devices, HM6801-VB can be used for load switch control, especially in small battery-powered devices. Its low on-resistance and high switching efficiency enable it to effectively control load current while saving space.
2. **Power management module**: In power management modules, this MOSFET can be used as a switch for low-voltage power supplies for battery management and power conversion circuits. Its high efficiency and low RDS(ON) can reduce energy loss and improve the overall efficiency of the power system.
3. **Small electric devices**: In small electric devices such as portable electronic products and handheld tools, HM6801-VB can be used as a switch or driver device to manage current and control power output. Its small SOT23-6 package is ideal for space-constrained applications.
These applications demonstrate the importance of the HM6801-VB in miniaturization and high-efficiency applications, providing reliable switching functionality while meeting the size and performance requirements of modern electronic designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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