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HM6800-VB Product details
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HM6800-VB MOSFET Product Introduction
HM6800-VB is a high-performance dual N-channel MOSFET in SOT23-6 package, designed for low voltage applications. It combines advanced Trench technology to provide low on-resistance and high current handling capability, suitable for a variety of compact electronic devices and circuits. The dual N-channel design of HM6800-VB enables it to provide multi-channel switching capabilities in a limited space, which is very suitable for high-density electronic design and integrated circuit applications.
HM6800-VB is a high-performance dual N-channel MOSFET in SOT23-6 package, designed for low voltage applications. It combines advanced Trench technology to provide low on-resistance and high current handling capability, suitable for a variety of compact electronic devices and circuits. The dual N-channel design of HM6800-VB enables it to provide multi-channel switching capabilities in a limited space, which is very suitable for high-density electronic design and integrated circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
HM6800-VB MOSFET detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench technology
- **Package type**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules of HM6800-VB MOSFET
The low on-resistance and compact dual-channel design of HM6800-VB MOSFET make it suitable for the following fields and modules:
1. **Mobile devices**: In mobile devices such as smartphones and portable electronics, HM6800-VB can be used as power management and switching elements to help achieve high-efficiency and low-power designs. Its compact package is suitable for providing stable switching functions in space-constrained applications.
2. **Computers and peripherals**: In computer hardware and peripherals, HM6800-VB can be used as a power switch or load switch to handle low-voltage and high-current applications, ensuring efficient operation and reliability of the equipment.
3. **LED drivers**: In LED lighting systems, the low on-resistance of HM6800-VB helps to efficiently control the current of LEDs, thereby improving the energy efficiency and performance of lighting systems, and is particularly suitable for high-density LED lighting modules.
4. **Consumer Electronics**: In a variety of consumer electronics products, such as home appliances and smart home devices, the HM6800-VB provides the necessary switching and power management functions to ensure the stability and efficiency of the equipment during operation.
Overall, the dual N-channel design, low on-resistance and small package of the HM6800-VB MOSFET make it an ideal choice for efficient and compact solutions in many electronic devices, providing excellent performance and reliability for a variety of applications.
The low on-resistance and compact dual-channel design of HM6800-VB MOSFET make it suitable for the following fields and modules:
1. **Mobile devices**: In mobile devices such as smartphones and portable electronics, HM6800-VB can be used as power management and switching elements to help achieve high-efficiency and low-power designs. Its compact package is suitable for providing stable switching functions in space-constrained applications.
2. **Computers and peripherals**: In computer hardware and peripherals, HM6800-VB can be used as a power switch or load switch to handle low-voltage and high-current applications, ensuring efficient operation and reliability of the equipment.
3. **LED drivers**: In LED lighting systems, the low on-resistance of HM6800-VB helps to efficiently control the current of LEDs, thereby improving the energy efficiency and performance of lighting systems, and is particularly suitable for high-density LED lighting modules.
4. **Consumer Electronics**: In a variety of consumer electronics products, such as home appliances and smart home devices, the HM6800-VB provides the necessary switching and power management functions to ensure the stability and efficiency of the equipment during operation.
Overall, the dual N-channel design, low on-resistance and small package of the HM6800-VB MOSFET make it an ideal choice for efficient and compact solutions in many electronic devices, providing excellent performance and reliability for a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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