HM6401-VB Product details
Product introduction:
HM6401-VB is a single P-channel MOSFET packaged in SOT23-6, designed for low-voltage load applications. The MOSFET has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) rating of ±20V. Its threshold voltage (Vth) is -1.7V, and the on-resistance (RDS(ON)) is 54mΩ at a VGS of 4.5V and 49mΩ at a VGS of 10V. These features enable the HM6401-VB to provide a lower on-resistance when turned on, thereby reducing power loss. It can support a drain current (ID) of up to -4.8A and uses Trench technology to provide excellent switching performance and efficient current transfer.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
1. **Package type**: SOT23-6
- The small package size is suitable for space-constrained circuit board design, while providing good heat dissipation performance and mechanical strength.
2. **Channel configuration**: Single P-channel
- Suitable for load switching and load control applications.
3. **Drain-source voltage (VDS)**: -30V
- Supports low-voltage load switching, suitable for low-voltage systems and load control.
4. **Gate-source voltage (VGS)**: ±20V
- Wide gate-source voltage range ensures reliable switching operation.
5. **Threshold voltage (Vth)**: -1.7V
- Lower threshold voltage helps turn on the MOSFET at lower gate voltages.
6. **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- Lower on-resistance reduces conduction loss and improves circuit efficiency.
7. **Drain current (ID)**: -4.8A
- Supports medium load current, suitable for small and medium power applications.
8. **Technology type**: Trench
- Adopts Trench technology to optimize current density and switching speed.
Domain and module applications:
HM6401-VB MOSFET is suitable for the following fields and modules:
1. **Load Switch**: Due to its low on-resistance and moderate drain current, HM6401-VB is very suitable as a load switch in various electronic devices, which can efficiently control the switch state of the load and is used in small power management and control modules.
2. **Battery Management**: In the battery protection circuit, as a load switch, it can effectively protect the battery from damage under overcurrent or overvoltage conditions, ensuring the safety and life of the battery.
3. **Consumer Electronics**: Suitable for switch control in consumer electronic products such as smart phones, tablets and other devices, which can provide stable load control and protection.
4. **Low Power Supply**: As a switching element in a low-voltage DC-DC converter, it helps improve power conversion efficiency and reduce power loss, and is suitable for small and medium power supply design.
5. **LED driver**: Suitable for low-power LED lighting systems as a constant current driver switching element to improve the stability and performance of the lighting system.
With its low on-resistance and moderate current capability, HM6401-VB can provide efficient and reliable performance in these applications.
Technical support:
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