HM630I-VB Product details
Product introduction:
HM630I-VB is a single-N-Channel MOSFET in TO251 package, designed for high voltage and high current applications. The device adopts advanced trench technology (Trench Technology), and its maximum drain-source voltage (VDS) is 200V, which can work stably under high voltage conditions. The gate-source voltage (VGS) of HM630I-VB is ±20V, the threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 270mΩ@VGS=10V, and the maximum drain current (ID) is 8A. This makes HM630I-VB excel in applications requiring high voltage and high current, and can provide reliable performance and stable working conditions.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- **Continuous drain current (ID)**: 8A
- **Technology**: Trench Technology
Domain and module applications:
HM630I-VB MOSFET has a wide range of applications in the following fields and modules due to its high voltage and moderate current handling capabilities:
1. **High voltage switching power supply (SMPS)**: In high voltage switching mode power supplies, HM630I-VB is able to handle voltages up to 200V, while its lower RDS(ON) helps reduce conduction losses and improve power conversion efficiency. This makes it very suitable for high voltage DC-DC converters and AC-DC converters.
2. **Power inverter**: In power inverter applications, such as solar inverters or wind power inverters, the high voltage handling capability and stable performance of HM630I-VB help handle high voltage inputs from renewable energy systems, ensuring reliable power conversion.
3. **Motor drive**: This MOSFET is also suitable for motor drive circuits, especially in motor control systems that require high voltage. Although its current handling capability is low (8A), it can provide stable current control and is suitable for applications in small and medium power motors.
4. **Battery Management System (BMS)**: In the battery management system, HM630I-VB can be used for the protection and management of high voltage batteries. It can effectively control the charging and discharging process of the battery to ensure the efficiency and safety of the system.
5. **High Voltage Load Switch**: In electronic devices that require high voltage load switching, such as high voltage power adapters or high voltage switch control modules, HM630I-VB can provide stable and reliable switching functions.
Overall, with its high voltage capability and effective power management, HM630I-VB provides a reliable solution in high voltage applications and is suitable for use in various power management and motor drive fields.
Technical support:
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