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HM630F-VB Product details
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Product Introduction - HM630F-VB MOSFET
The HM630F-VB is a single N-channel MOSFET in a TO-220F package, designed for high voltage applications. It has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, based on advanced Trench technology to provide efficient switching performance and low power consumption. The MOSFET has an on-resistance (RDS(ON)) of 265mΩ at a gate drive voltage of 10V and is capable of supporting a continuous drain current (ID) of up to 10A. The design of the HM630F-VB makes it suitable for switching and control tasks in high voltage and high current applications.
The HM630F-VB is a single N-channel MOSFET in a TO-220F package, designed for high voltage applications. It has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, based on advanced Trench technology to provide efficient switching performance and low power consumption. The MOSFET has an on-resistance (RDS(ON)) of 265mΩ at a gate drive voltage of 10V and is capable of supporting a continuous drain current (ID) of up to 10A. The design of the HM630F-VB makes it suitable for switching and control tasks in high voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter Description
1. **Package Type**: TO-220F
- **Package Description**: The TO-220F package is a surface mount package suitable for power MOSFETs, with excellent heat dissipation and a large pin area, suitable for applications requiring high power handling.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFETs excel in switching and amplification applications, typically with lower RDS(ON) and higher switching speeds, and are suitable for high current and high voltage applications.
3. **Drain-Source Voltage (VDS)**: 200V
- **Description**: The 200V drain-source voltage enables this MOSFET to handle high voltage applications, suitable for high voltage switching and power control circuits.
4. **Gate-source voltage (VGS)**: ±20V
- **Description**: The gate-source voltage range of ±20V provides design flexibility and supports a variety of gate drive conditions, suitable for different control requirements.
5. **Threshold voltage (Vth)**: 3V
- **Description**: The threshold voltage of 3V means that the MOSFET starts to conduct at a higher gate voltage, which is suitable for applications that require a higher trigger voltage.
6. **On-resistance (RDS(ON))**:
- **265mΩ@VGS=10V**
- **Description**: Higher on-resistance will cause certain power loss, but it can provide stable switching performance in high voltage applications.
7. **Drain current (ID)**: 10A
- **Description**: The 10A drain current capability makes this MOSFET suitable for medium current load applications, providing reliable switching and control.
8. **Technology Type**: Trench
- **Description**: Trench technology helps reduce on-resistance and increase power density, allowing MOSFET to excel in high-efficiency and high-power density applications.
1. **Package Type**: TO-220F
- **Package Description**: The TO-220F package is a surface mount package suitable for power MOSFETs, with excellent heat dissipation and a large pin area, suitable for applications requiring high power handling.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFETs excel in switching and amplification applications, typically with lower RDS(ON) and higher switching speeds, and are suitable for high current and high voltage applications.
3. **Drain-Source Voltage (VDS)**: 200V
- **Description**: The 200V drain-source voltage enables this MOSFET to handle high voltage applications, suitable for high voltage switching and power control circuits.
4. **Gate-source voltage (VGS)**: ±20V
- **Description**: The gate-source voltage range of ±20V provides design flexibility and supports a variety of gate drive conditions, suitable for different control requirements.
5. **Threshold voltage (Vth)**: 3V
- **Description**: The threshold voltage of 3V means that the MOSFET starts to conduct at a higher gate voltage, which is suitable for applications that require a higher trigger voltage.
6. **On-resistance (RDS(ON))**:
- **265mΩ@VGS=10V**
- **Description**: Higher on-resistance will cause certain power loss, but it can provide stable switching performance in high voltage applications.
7. **Drain current (ID)**: 10A
- **Description**: The 10A drain current capability makes this MOSFET suitable for medium current load applications, providing reliable switching and control.
8. **Technology Type**: Trench
- **Description**: Trench technology helps reduce on-resistance and increase power density, allowing MOSFET to excel in high-efficiency and high-power density applications.
Domain and module applications：
Applications and modules
1. **High-voltage power switch**:
HM630F-VB is ideal for high-voltage power switch applications such as high-voltage DC-DC converters and power management systems. Its 200V drain-source voltage enables it to handle high voltage applications and provide reliable switching control.
2. **Power amplifier**:
In power amplifier circuits, this MOSFET can be used as a switching element to handle high voltage signals, ensure stable power output, and improve the overall efficiency of the system.
3. **Inverter**:
HM630F-VB is suitable for inverter circuits, especially in inverter designs that require high voltage and medium current handling, such as solar inverters and power converters, to provide efficient power conversion.
4. **Power protection**:
In power protection circuits, this MOSFET can be used as an overvoltage protection or current limiting switch to help protect the circuit from overvoltage or overcurrent, improving system reliability and safety.
5. **Automotive electronics**:
In automotive electronic systems, such as on-board power management modules, this MOSFET is able to handle high voltage loads, providing stable switching control and efficient energy management for the vehicle electrical system.
Through the detailed description of the above parameters and application areas, the HM630F-VB MOSFET demonstrates its wide applicability and excellent performance in high voltage and high power density applications.
1. **High-voltage power switch**:
HM630F-VB is ideal for high-voltage power switch applications such as high-voltage DC-DC converters and power management systems. Its 200V drain-source voltage enables it to handle high voltage applications and provide reliable switching control.
2. **Power amplifier**:
In power amplifier circuits, this MOSFET can be used as a switching element to handle high voltage signals, ensure stable power output, and improve the overall efficiency of the system.
3. **Inverter**:
HM630F-VB is suitable for inverter circuits, especially in inverter designs that require high voltage and medium current handling, such as solar inverters and power converters, to provide efficient power conversion.
4. **Power protection**:
In power protection circuits, this MOSFET can be used as an overvoltage protection or current limiting switch to help protect the circuit from overvoltage or overcurrent, improving system reliability and safety.
5. **Automotive electronics**:
In automotive electronic systems, such as on-board power management modules, this MOSFET is able to handle high voltage loads, providing stable switching control and efficient energy management for the vehicle electrical system.
Through the detailed description of the above parameters and application areas, the HM630F-VB MOSFET demonstrates its wide applicability and excellent performance in high voltage and high power density applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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