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HM60N75K-VB Product details
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Product Introduction
HM60N75K-VB is a single N-channel MOSFET in TO252 package. This MOSFET adopts Trench technology, which has extremely low on-resistance and high current handling capability. It can operate stably at a drain-source voltage of 80V, a gate-source voltage range of ±20V, and a threshold voltage of 3V. Its on-resistance is 5mΩ@VGS=10V, which can provide low-power switching operation under high current conditions. This makes HM60N75K-VB very suitable for applications requiring high current and high efficiency.
HM60N75K-VB is a single N-channel MOSFET in TO252 package. This MOSFET adopts Trench technology, which has extremely low on-resistance and high current handling capability. It can operate stably at a drain-source voltage of 80V, a gate-source voltage range of ±20V, and a threshold voltage of 3V. Its on-resistance is 5mΩ@VGS=10V, which can provide low-power switching operation under high current conditions. This makes HM60N75K-VB very suitable for applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 75A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
The low on-resistance and high current handling capability of HM60N75K-VB MOSFET make it suitable for a variety of applications that require high efficiency and high current:
1. **Power management**: In high current power switches and power converters, HM60N75K-VB can provide low power consumption and high efficiency switch control, suitable for high current DC-DC converters.
2. **Motor drive**: Used in motor drive modules, the high current capability of this MOSFET ensures stable operation of the motor under high load conditions while reducing heat generation.
3. **Power amplifier**: In power amplifier circuits, its low on-resistance can be used to improve the power efficiency of the amplifier, suitable for efficient power regulation.
4. **Industrial applications**: Suitable for high current industrial control and power supply systems, such as high power relays and power protection circuits, to ensure system stability and reliability.
The low on-resistance and high current handling capability of HM60N75K-VB MOSFET make it suitable for a variety of applications that require high efficiency and high current:
1. **Power management**: In high current power switches and power converters, HM60N75K-VB can provide low power consumption and high efficiency switch control, suitable for high current DC-DC converters.
2. **Motor drive**: Used in motor drive modules, the high current capability of this MOSFET ensures stable operation of the motor under high load conditions while reducing heat generation.
3. **Power amplifier**: In power amplifier circuits, its low on-resistance can be used to improve the power efficiency of the amplifier, suitable for efficient power regulation.
4. **Industrial applications**: Suitable for high current industrial control and power supply systems, such as high power relays and power protection circuits, to ensure system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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