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HM60N20D-VB Product details
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HM60N20D-VB MOSFET Product Introduction
HM60N20D-VB is a high-performance single N-channel power MOSFET in TO263 package. This MOSFET has a drain-source withstand voltage (VDS) of 200V and a gate-source withstand voltage (VGS) of ±20V, suitable for medium and high voltage applications. Its gate threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 38mΩ @ VGS=10V, and it can handle a maximum drain current (ID) of 45A. The HM60N20D-VB uses advanced Trench technology to optimize its switching efficiency and current handling capability, making it suitable for use in power electronic systems that require high efficiency.
HM60N20D-VB is a high-performance single N-channel power MOSFET in TO263 package. This MOSFET has a drain-source withstand voltage (VDS) of 200V and a gate-source withstand voltage (VGS) of ±20V, suitable for medium and high voltage applications. Its gate threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 38mΩ @ VGS=10V, and it can handle a maximum drain current (ID) of 45A. The HM60N20D-VB uses advanced Trench technology to optimize its switching efficiency and current handling capability, making it suitable for use in power electronic systems that require high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HM60N20D-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples of HM60N20D-VB
HM60N20D-VB is very suitable for the following applications due to its high voltage tolerance and low on-resistance:
1. **DC-DC converter**: In DC-DC converters, this MOSFET can effectively handle voltages of 200V and is suitable for applications that require high voltage conversion and high current handling. Its low on-resistance helps reduce switching losses and improve conversion efficiency, and is widely used in communication and computer power modules.
2. **Automotive power management**: In automotive power management systems, HM60N20D-VB can be used in battery management systems and motor drive circuits. Its high current handling capability and high voltage tolerance make it suitable for high-voltage applications in automobiles, such as starting circuits and power distribution systems.
3. **High-voltage switching power supply**: This MOSFET is suitable for high-voltage switching power supplies and can handle voltages up to 200V. Its low RDS(ON) provides high-efficiency power conversion and is suitable for power modules in high-voltage applications such as industrial power supplies and electrical equipment.
These applications demonstrate the important role of the HM60N20D-VB in high-voltage and high-current environments, which can effectively improve the performance and stability of the system.
HM60N20D-VB is very suitable for the following applications due to its high voltage tolerance and low on-resistance:
1. **DC-DC converter**: In DC-DC converters, this MOSFET can effectively handle voltages of 200V and is suitable for applications that require high voltage conversion and high current handling. Its low on-resistance helps reduce switching losses and improve conversion efficiency, and is widely used in communication and computer power modules.
2. **Automotive power management**: In automotive power management systems, HM60N20D-VB can be used in battery management systems and motor drive circuits. Its high current handling capability and high voltage tolerance make it suitable for high-voltage applications in automobiles, such as starting circuits and power distribution systems.
3. **High-voltage switching power supply**: This MOSFET is suitable for high-voltage switching power supplies and can handle voltages up to 200V. Its low RDS(ON) provides high-efficiency power conversion and is suitable for power modules in high-voltage applications such as industrial power supplies and electrical equipment.
These applications demonstrate the important role of the HM60N20D-VB in high-voltage and high-current environments, which can effectively improve the performance and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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