中文
English
HM60N04K-VB Product details
Back to previous pageProduct introduction：
HM60N04K-VB Product Introduction
HM60N04K-VB is a single N-channel MOSFET in a TO252 package, designed for low voltage and high current applications. This MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) rating of ±20V. Its threshold voltage (Vth) is 2.5V, and its on-resistance (RDS(ON)) is 14mΩ at a VGS of 4.5V and 12mΩ at a VGS of 10V. This low on-resistance design can significantly reduce power loss and improve circuit efficiency. The HM60N04K-VB is capable of supporting a drain current (ID) of up to 55A and uses Trench technology to ensure efficient current transfer and excellent switching performance.
HM60N04K-VB is a single N-channel MOSFET in a TO252 package, designed for low voltage and high current applications. This MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) rating of ±20V. Its threshold voltage (Vth) is 2.5V, and its on-resistance (RDS(ON)) is 14mΩ at a VGS of 4.5V and 12mΩ at a VGS of 10V. This low on-resistance design can significantly reduce power loss and improve circuit efficiency. The HM60N04K-VB is capable of supporting a drain current (ID) of up to 55A and uses Trench technology to ensure efficient current transfer and excellent switching performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HM60N04K-VB Detailed parameter description
1. **Package type**: TO252
- Provides good heat dissipation and mechanical strength, suitable for medium-sized circuit board design.
2. **Channel configuration**: Single N-channel
- Suitable for various switching and amplification circuits, simplifying the design.
3. **Drain-source voltage (VDS)**: 40V
- Supports low to medium voltage applications, suitable for low voltage systems and power management.
4. **Gate-source voltage (VGS)**: ±20V
- Wide gate-source voltage range ensures reliable switching operation.
5. **Threshold voltage (Vth)**: 2.5V
- Lower threshold voltage helps turn on the MOSFET at a lower gate voltage.
6. **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- Lower on-resistance reduces conduction loss and improves circuit efficiency.
7. **Drain current (ID)**: 55A
- Supports high current load, suitable for high power applications.
8. **Technology type**: Trench
- Adopts Trench technology to optimize current density and switching speed.
1. **Package type**: TO252
- Provides good heat dissipation and mechanical strength, suitable for medium-sized circuit board design.
2. **Channel configuration**: Single N-channel
- Suitable for various switching and amplification circuits, simplifying the design.
3. **Drain-source voltage (VDS)**: 40V
- Supports low to medium voltage applications, suitable for low voltage systems and power management.
4. **Gate-source voltage (VGS)**: ±20V
- Wide gate-source voltage range ensures reliable switching operation.
5. **Threshold voltage (Vth)**: 2.5V
- Lower threshold voltage helps turn on the MOSFET at a lower gate voltage.
6. **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- Lower on-resistance reduces conduction loss and improves circuit efficiency.
7. **Drain current (ID)**: 55A
- Supports high current load, suitable for high power applications.
8. **Technology type**: Trench
- Adopts Trench technology to optimize current density and switching speed.
Domain and module applications：
HM60N04K-VB Application Fields and Module Examples
HM60N04K-VB MOSFET performs well in the following fields and modules:
1. **Power Management**: Used as a switching element in a DC-DC converter to improve power conversion efficiency and reduce power loss, suitable for high-efficiency power supply design.
2. **Motor Control**: Used in motor drive circuits to handle high current loads, able to stably control the start and operation of the motor, suitable for various motor control applications.
3. **Load Switch**: Used as a load switch in various electronic devices (such as consumer electronics and industrial equipment), stably controlling the switch state of the load, suitable for high current and low voltage loads.
4. **LED Drive**: Suitable for LED lighting systems, as a constant current drive switch element to improve system efficiency and stability.
5. **Power Protection**: Used in battery management systems (BMS) and power protection circuits to handle high current loads, ensuring safe operation and overload protection of the system.
HM60N04K-VB is able to provide excellent performance and efficiency in these applications with its low on-resistance and high drain current capability.
HM60N04K-VB MOSFET performs well in the following fields and modules:
1. **Power Management**: Used as a switching element in a DC-DC converter to improve power conversion efficiency and reduce power loss, suitable for high-efficiency power supply design.
2. **Motor Control**: Used in motor drive circuits to handle high current loads, able to stably control the start and operation of the motor, suitable for various motor control applications.
3. **Load Switch**: Used as a load switch in various electronic devices (such as consumer electronics and industrial equipment), stably controlling the switch state of the load, suitable for high current and low voltage loads.
4. **LED Drive**: Suitable for LED lighting systems, as a constant current drive switch element to improve system efficiency and stability.
5. **Power Protection**: Used in battery management systems (BMS) and power protection circuits to handle high current loads, ensuring safe operation and overload protection of the system.
HM60N04K-VB is able to provide excellent performance and efficiency in these applications with its low on-resistance and high drain current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
