Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: DFN8 (5x6)
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications:
Application fields and module examples
The high current and low on-resistance characteristics of the **HM60N03D-VB** MOSFET make it widely used in multiple fields and modules, such as:
1. **Power management**:
- Suitable for high-efficiency power converters such as DC-DC converters, synchronous rectifiers, and power adapters. Due to its low on-resistance and high current handling capability, it can effectively reduce energy loss, improve power conversion efficiency, and meet high-performance power management needs.
2. **Battery management system**:
- Used in battery protection circuits and chargers, such as lithium battery chargers and battery pack protection circuits. This MOSFET can withstand high currents during battery charging and discharging, provide reliable switching functions, and optimize the performance of battery management systems.
3. **Motor drive**:
- Used in motor drive circuits, such as stepper motors and DC motor drivers. This MOSFET can effectively handle high currents and provide low on-resistance switching characteristics, thereby improving the drive efficiency and reliability of the motor.
4. **Power Amplifier**:
- Used in power amplifiers and high-frequency switching circuits. Due to its excellent switching performance and low on-resistance, the HM60N03D-VB is able to operate stably in high-frequency applications, reducing signal distortion and power consumption.
5. **Automotive Electronics**:
- In automotive electrical systems such as power windows, seat adjustment, and LED lighting control. The high current handling capability and small package of this MOSFET make it suitable for the compact space and high power requirements of automotive electronic systems.
Through these application examples, it can be seen that the HM60N03D-VB is a high-efficiency MOSFET suitable for high-current, low-voltage applications, which can meet the needs of various high-performance power supplies and switching circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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