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HM607K-VB Product details
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Product Introduction - HM607K-VB MOSFET
HM607K-VB is a common drain N+P type MOSFET in TO-252-4L package with a drain-source voltage (VDS) of ±30V and a gate-source voltage (VGS) of ±20V. This MOSFET is based on Trench technology and is designed for high-efficiency and low-power applications. When the gate drive voltage is 4.5V, the on-resistance of the N-channel and P-channel MOSFETs are 10mΩ and 35mΩ respectively, and at a gate drive voltage of 10V, they are 7mΩ and 25mΩ respectively. The maximum drain current of its N-channel and P-channel is 65A and -35A respectively. This MOSFET is suitable for bipolar switching and power management applications that require high current and high power density.
HM607K-VB is a common drain N+P type MOSFET in TO-252-4L package with a drain-source voltage (VDS) of ±30V and a gate-source voltage (VGS) of ±20V. This MOSFET is based on Trench technology and is designed for high-efficiency and low-power applications. When the gate drive voltage is 4.5V, the on-resistance of the N-channel and P-channel MOSFETs are 10mΩ and 35mΩ respectively, and at a gate drive voltage of 10V, they are 7mΩ and 25mΩ respectively. The maximum drain current of its N-channel and P-channel is 65A and -35A respectively. This MOSFET is suitable for bipolar switching and power management applications that require high current and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | 7/25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Parameter Description
1. **Package Type**: TO-252-4L
- **Package Description**: TO-252-4L is a four-pin surface mount package with good heat dissipation performance and a small footprint, suitable for compact designs in high-power applications.
2. **Channel Type**: Common Source N+P Type
- **Description**: This MOSFET integrates N-channel and P-channel MOSFETs to achieve bipolar switching, which is convenient for various high-efficiency switching and power management applications.
3. **Drain-Source Voltage (VDS)**: ±30V
- **Description**: The drain-source voltage of ±30V enables this MOSFET to handle medium-voltage switching applications and is suitable for a variety of voltage drive environments.
4. **Gate-source voltage (VGS)**: ±20V
- **Description**: The ±20V gate-source voltage range provides flexible driving conditions and is suitable for a variety of control circuits.
5. **Threshold voltage (Vth)**:
- **N-channel**: 1.8V
- **P-channel**: -1.7V
- **Description**: The lower threshold voltage enables the MOSFET to be turned on at a lower gate voltage, improving switching efficiency and system response speed.
6. **On-resistance (RDS(ON))**:
- **N-channel**:
- **10mΩ@VGS=4.5V**
- **7mΩ@VGS=10V**
- **P-channel**:
- **35mΩ@VGS=4.5V**
- **25mΩ@VGS=10V**
- **Description**: Low on-resistance helps reduce switching losses and improve system efficiency.
7. **Drain current (ID)**:
- **N-channel**: 65A
- **P-channel**: -35A
- **Description**: High current handling capability makes this MOSFET suitable for applications with high current loads, providing stable switching performance.
8. **Technology Type**: Trench
- **Description**: Trench technology helps reduce on-resistance and increase power density, allowing MOSFET to excel in high-efficiency and high-power density applications.
1. **Package Type**: TO-252-4L
- **Package Description**: TO-252-4L is a four-pin surface mount package with good heat dissipation performance and a small footprint, suitable for compact designs in high-power applications.
2. **Channel Type**: Common Source N+P Type
- **Description**: This MOSFET integrates N-channel and P-channel MOSFETs to achieve bipolar switching, which is convenient for various high-efficiency switching and power management applications.
3. **Drain-Source Voltage (VDS)**: ±30V
- **Description**: The drain-source voltage of ±30V enables this MOSFET to handle medium-voltage switching applications and is suitable for a variety of voltage drive environments.
4. **Gate-source voltage (VGS)**: ±20V
- **Description**: The ±20V gate-source voltage range provides flexible driving conditions and is suitable for a variety of control circuits.
5. **Threshold voltage (Vth)**:
- **N-channel**: 1.8V
- **P-channel**: -1.7V
- **Description**: The lower threshold voltage enables the MOSFET to be turned on at a lower gate voltage, improving switching efficiency and system response speed.
6. **On-resistance (RDS(ON))**:
- **N-channel**:
- **10mΩ@VGS=4.5V**
- **7mΩ@VGS=10V**
- **P-channel**:
- **35mΩ@VGS=4.5V**
- **25mΩ@VGS=10V**
- **Description**: Low on-resistance helps reduce switching losses and improve system efficiency.
7. **Drain current (ID)**:
- **N-channel**: 65A
- **P-channel**: -35A
- **Description**: High current handling capability makes this MOSFET suitable for applications with high current loads, providing stable switching performance.
8. **Technology Type**: Trench
- **Description**: Trench technology helps reduce on-resistance and increase power density, allowing MOSFET to excel in high-efficiency and high-power density applications.
Domain and module applications：
Applications and Modules
1. **Power Management**:
HM607K-VB is ideal for switching applications in power management circuits, such as DC-DC converters and power distribution systems. Its low on-resistance and high current capability enable it to effectively control the flow of power and improve the overall efficiency of the system.
2. **Motor Drive**:
In motor control applications, this MOSFET can be used as a bipolar switch in the motor drive circuit to achieve forward and reverse control of the motor and ensure smooth operation of the motor.
3. **Load Switch**:
This MOSFET is also suitable for load switch applications, such as high-side and low-side switches in battery-powered systems, providing reliable switching control through high current handling capabilities and low on-resistance.
4. **Automotive Electronics**:
In automotive electronic systems, such as on-board power management modules and high-power load control, this MOSFET is able to provide an efficient switching solution that supports high current and low power consumption requirements.
5. **Power Management IC**:
In power management integrated circuits, HM607K-VB can be used as a bipolar switching element for switch control under various voltage and current conditions to improve the overall performance and reliability of the IC.
Through the detailed description of the above parameters and application areas, HM607K-VB MOSFET demonstrates its wide applicability and excellent performance in high current and high power density applications.
1. **Power Management**:
HM607K-VB is ideal for switching applications in power management circuits, such as DC-DC converters and power distribution systems. Its low on-resistance and high current capability enable it to effectively control the flow of power and improve the overall efficiency of the system.
2. **Motor Drive**:
In motor control applications, this MOSFET can be used as a bipolar switch in the motor drive circuit to achieve forward and reverse control of the motor and ensure smooth operation of the motor.
3. **Load Switch**:
This MOSFET is also suitable for load switch applications, such as high-side and low-side switches in battery-powered systems, providing reliable switching control through high current handling capabilities and low on-resistance.
4. **Automotive Electronics**:
In automotive electronic systems, such as on-board power management modules and high-power load control, this MOSFET is able to provide an efficient switching solution that supports high current and low power consumption requirements.
5. **Power Management IC**:
In power management integrated circuits, HM607K-VB can be used as a bipolar switching element for switch control under various voltage and current conditions to improve the overall performance and reliability of the IC.
Through the detailed description of the above parameters and application areas, HM607K-VB MOSFET demonstrates its wide applicability and excellent performance in high current and high power density applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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