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HM5N60I-VB Product details

Product introduction:

1. HM5N60I-VB Product Introduction
HM5N60I-VB is a high-voltage N-channel MOSFET in TO251 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 650V, which can handle higher voltage power management requirements. The maximum drain current (ID) of this MOSFET is 5A, which is suitable for applications requiring high voltage and medium current. Using SJ_Multi-EPI technology, HM5N60I-VB provides an on-resistance (RDS(ON)) of 950mΩ and has good switching performance and stability at a gate-source voltage of 10V. Its threshold voltage (Vth) is 3.5V, which enables it to have reliable switching control capabilities in high-voltage situations.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 650V 3.5V 5A 950mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
2. HM5N60I-VB Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI technology
- **Switching speed**: Moderate, suitable for high voltage applications
- **Power dissipation**: High efficiency, but may have higher power consumption at high current

Domain and module applications:

3. Application fields and module examples
The high voltage characteristics and reliable performance of HM5N60I-VB make it suitable for a variety of high voltage and power management applications. The following are some typical application fields:

1. **Switching power supply (SMPS)**: In the switching mode power supply, HM5N60I-VB can be used for high voltage input and output switching modules, providing high-efficiency power conversion, ensuring stable operation of the system, and is particularly suitable for power management in high voltage environments.

2. **Power inverter**: In photovoltaic inverters and other power inverter applications, HM5N60I-VB can handle high voltage DC input and convert it to AC, providing efficient energy conversion for renewable energy systems.

3. **Motor control system**: This MOSFET can be used as a high voltage switching element in a motor drive module, especially in motor control applications that require high voltage, to provide stable and reliable current control.

4. **Industrial power**: In various industrial power supplies and high-voltage power modules, HM5N60I-VB is able to withstand high voltage and perform effective switching control for power protection and voltage regulation.

5. **Automotive electrical system**: In automotive electrical systems, such as battery management systems (BMS) and electric drive systems, HM5N60I-VB provides reliable switching performance at high voltages, helping to ensure the stability and safety of vehicle electrical systems.

In summary, HM5N60I-VB can play an important role in power management, power inverters, motor control, industrial power supplies, and automotive electronic systems due to its high voltage and medium current characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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