HM5N60BK-VB Product details
Product introduction:
The HM5N60BK-VB is a single N-channel MOSFET packaged in TO252 with a high drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) rating of ±30V. This MOSFET has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 1000mΩ, exhibiting a high resistance at a VGS of 10V. Its drain current (ID) can reach up to 5A, and it uses SJ_Multi-EPI technology to provide high voltage resistance and reliable switching behavior. Although its on-resistance is relatively high, its high drain-source voltage makes it particularly suitable for use in applications that require high voltage resistance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package type**: TO252
- Suitable for medium-sized circuit boards, providing good heat dissipation and mechanical strength.
2. **Channel configuration**: Single N-channel
- Suitable for various switching and amplification circuits.
3. **Drain-source voltage (VDS)**: 650V
- Supports high voltage applications, suitable for high voltage switching and power management.
4. **Gate-source voltage (VGS)**: ±30V
- Wide gate-source voltage range to ensure reliable switching operation.
5. **Threshold voltage (Vth)**: 3.5V
- Provides a moderate threshold voltage to ensure that the MOSFET is turned on at the appropriate voltage.
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- Higher on-resistance, suitable for applications with less stringent power loss requirements.
7. **Drain current (ID)**: 5A
- Suitable for applications with medium current loads.
8. **Technology type**: SJ_Multi-EPI
- Provides excellent high voltage withstand capability and switching performance.
Domain and module applications:
The design of HM5N60BK-VB MOSFET makes it suitable for the following fields and modules:
1. **High-voltage power switch**: Due to its high drain-source voltage of 650V, HM5N60BK-VB is very suitable for use as a switching element in high-voltage power converters, ensuring safety and stability when handling high-voltage loads.
2. **Industrial power supply**: As a power management switch in industrial equipment, it can handle high voltage current and provide stable power supply.
3. **Lighting system**: It can be applied to high-voltage lighting systems, such as high-voltage gas discharge lamps, to handle high-voltage switching operations.
4. **Power protection**: Used in power protection circuits to prevent damage under overvoltage or overcurrent conditions and ensure safe operation of the circuit.
5. **Home appliance control**: Suitable for switch control in high-voltage home appliances, such as high-voltage electric heating equipment, to ensure the stability and safety of high-voltage operation.
Although the HM5N60BK-VB has a high on-resistance, its high withstand voltage and moderate current capability make it excel in applications that require high voltage handling.
Technical support:
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