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HM5N60BI-VB Product details

Product introduction:

Product Introduction

**HM5N60BI-VB** is a high voltage, low on-resistance N-Channel MOSFET in a TO251 package. Its main features include a maximum drain-to-source voltage (VDS) of 650V, suitable for high voltage applications. The MOSFET is equipped with a gate-source voltage (VGS) of 30V and has a threshold voltage (Vth) of 3.5V. Its on-resistance at a gate voltage of 10V is 950mΩ, giving it lower power consumption and heat loss in switching applications. Using SJ_Multi-EPI technology, this MOSFET is designed to handle high current and high voltage requirements with reliable performance and stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 650V 3.5V 5A 950mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
Detailed parameter description

- **Package**: TO251
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Application fields and module examples

The high voltage and low on-resistance characteristics of the **HM5N60BI-VB** MOSFET make it suitable for multiple fields and modules, such as:

1. **Power management module**:
- Suitable for high voltage power converters and switching power supplies, such as industrial power supplies, server power supplies, and UPS (uninterruptible power supply) systems. Due to its high voltage tolerance and low on-resistance, it can effectively reduce power loss and improve system efficiency.

2. **Motor drive**:
- Used in motor drives, such as AC motor and DC motor drive circuits. In motor control systems, this MOSFET can handle high voltage loads and reduce power consumption and heat generation when switching, thereby improving the operating efficiency and life of the motor.

3. **Inverter**:
- Used in solar inverters and other high power inverters. Due to its high voltage and current handling capabilities, it can effectively control high power switches in inverters, thereby optimizing energy conversion and system stability.

4. **Automotive electronics**:
- In automotive electronic systems, such as power window control, power seat adjustment, and other high-voltage switching applications. This MOSFET provides reliable switching performance and high voltage tolerance, suitable for on-board high-voltage circuits.

5. **Industrial automation**:
- Suitable for high-voltage switching applications in industrial automation equipment, such as motor and pump control in factory automation. Its high voltage tolerance and low on-resistance help improve the stability and efficiency of the equipment.

From these application examples, it can be seen that the HM5N60BI-VB is suitable for application scenarios requiring high voltage, high current, and high efficiency, and can meet the requirements of various high-voltage and high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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