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HM50N08-VB Product details

Product introduction:

Product Introduction

**HM50N08-VB** is a single N-channel MOSFET in TO220 package, designed for high current and high efficiency applications. Its drain-source voltage (VDS) is 80V, and the gate-source voltage (VGS) can withstand a maximum of ±20V. This MOSFET uses Trench technology, has low on-resistance and high switching speed, and can operate stably under high current conditions. Its low on-resistance (RDS(ON)) makes it very suitable for high power and high efficiency power management and motor control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package type**: TO220
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=10V
- 9mΩ @ VGS=4.5V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
- **Switching speed**: Fast switching, suitable for high frequency applications
- **Maximum power dissipation (Pd)**: 94W @ 25°C
- **Gate charge (Qg)**: 82nC @ VGS=10V, VDS=60V
- **Operating temperature range**: -55°C to 150°C

Domain and module applications:

Applications and modules

**HM50N08-VB**'s high current carrying capacity and low on-resistance enable it to excel in multiple high-power applications, including:

1. **Power management system**: This MOSFET can be used as the main switch in a switching power supply (SMPS), and its low on-resistance and high current handling capability enable it to provide excellent performance in high-efficiency power conversion. Especially in server power supplies and industrial power modules, HM50N08-VB can improve system efficiency and reduce energy losses.

2. **Motor drive**: In high-power motor drives, HM50N08-VB can provide high current support, suitable for electric vehicle drives, motor control modules and industrial automation equipment. These applications usually require MOSFETs to handle high currents and maintain low conduction losses to ensure high efficiency and long life of the motor.

3. **Power Inverter**: Suitable for photovoltaic inverter or other high power inverter applications, this MOSFET can work stably under high current conditions to help convert DC power into efficient AC power. This feature makes it very popular in renewable energy systems.

4. **Battery Management System (BMS)**: In battery management systems, HM50N08-VB can be used for battery charge and discharge control, especially in electric vehicles and energy storage systems that require high current handling capabilities. Its low on-resistance can reduce power losses and improve the overall efficiency of the system.

5. **High Efficiency Lighting System**: Due to its high current handling capability and low on-resistance, this MOSFET can be used in high power LED drivers and dimming controllers to provide stable current control to ensure efficient operation and long life of lighting systems.

The high current carrying capability, low on-resistance and Trench technology of HM50N08-VB enable it to perform well in a variety of high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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