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HM50N06KA-VB Product details
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Product Introduction - HM50N06KA-VB MOSFET
HM50N06KA-VB is a single N-channel MOSFET in a TO-252 package with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It is based on advanced trench technology and is designed for high-efficiency and high-power density applications. This MOSFET has a low on-resistance (RDS(ON)) of 13mΩ at a gate drive voltage of 4.5V and 10mΩ at a gate drive voltage of 10V. It is capable of providing up to 58A of continuous drain current (ID), making it suitable for power management and motor drive applications that require high current and low loss.
HM50N06KA-VB is a single N-channel MOSFET in a TO-252 package with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It is based on advanced trench technology and is designed for high-efficiency and high-power density applications. This MOSFET has a low on-resistance (RDS(ON)) of 13mΩ at a gate drive voltage of 4.5V and 10mΩ at a gate drive voltage of 10V. It is capable of providing up to 58A of continuous drain current (ID), making it suitable for power management and motor drive applications that require high current and low loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter Description
1. **Package Type**: TO-252
- **Package Description**: TO-252 package is a compact surface mount package with good heat dissipation performance and small footprint, suitable for high current application scenarios.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFETs generally have lower RDS(ON) and faster switching speeds, and are widely used in many high-efficiency applications.
3. **Drain-Source Voltage (VDS)**: 60V
- **Description**: The 60V drain-source voltage makes this MOSFET suitable for medium voltage switching applications such as DC-DC converters and load switches.
4. **Gate-Source Voltage (VGS)**: ±20V
- **Description**: The ±20V gate-source voltage range provides sufficient design flexibility and is suitable for a variety of drive voltage environments.
5. **Threshold voltage (Vth)**: 2.5V
- **Description**: The lower threshold voltage enables it to turn on at a lower gate voltage, saving power loss and improving efficiency.
6. **On-resistance (RDS(ON))**:
- **13mΩ@VGS=4.5V**
- **10mΩ@VGS=10V**
- **Description**: Low on-resistance means lower power loss in the on state, improving overall efficiency.
7. **Drain current (ID)**: 58A
- **Description**: The drain current capability of up to 58A makes this MOSFET suitable for applications with high current loads.
8. **Technology type**: Trench
- **Description**: Trench technology has lower on-resistance and high power density, enabling high performance on a smaller chip area.
1. **Package Type**: TO-252
- **Package Description**: TO-252 package is a compact surface mount package with good heat dissipation performance and small footprint, suitable for high current application scenarios.
2. **Channel Type**: Single N-channel
- **Description**: N-channel MOSFETs generally have lower RDS(ON) and faster switching speeds, and are widely used in many high-efficiency applications.
3. **Drain-Source Voltage (VDS)**: 60V
- **Description**: The 60V drain-source voltage makes this MOSFET suitable for medium voltage switching applications such as DC-DC converters and load switches.
4. **Gate-Source Voltage (VGS)**: ±20V
- **Description**: The ±20V gate-source voltage range provides sufficient design flexibility and is suitable for a variety of drive voltage environments.
5. **Threshold voltage (Vth)**: 2.5V
- **Description**: The lower threshold voltage enables it to turn on at a lower gate voltage, saving power loss and improving efficiency.
6. **On-resistance (RDS(ON))**:
- **13mΩ@VGS=4.5V**
- **10mΩ@VGS=10V**
- **Description**: Low on-resistance means lower power loss in the on state, improving overall efficiency.
7. **Drain current (ID)**: 58A
- **Description**: The drain current capability of up to 58A makes this MOSFET suitable for applications with high current loads.
8. **Technology type**: Trench
- **Description**: Trench technology has lower on-resistance and high power density, enabling high performance on a smaller chip area.
Domain and module applications：
Applications and modules
1. **Power management**:
HM50N06KA-VB is suitable for high-efficiency switching elements in switching power supplies, especially as synchronous rectifiers in DC-DC converters, which can significantly reduce switching losses and improve power conversion efficiency.
2. **Motor drive**:
In motor control applications, this MOSFET can be used in the control circuit of brushless DC motors (BLDC) or stepper motors to provide high-speed and efficient current switching to ensure smooth operation of the motor.
3. **Load switch**:
The device can also be used in high-current load switches as the main switching element to provide reliable switching control for high-current loads in battery-powered devices and industrial automation systems.
4. **Automotive electronics**:
Due to its durability and high current handling capability, this MOSFET is suitable for use in power distribution modules in automotive electronics, such as electric power steering (EPS) and on-board chargers.
Through the combination of the above parameters and applications, HM50N06KA-VB MOSFET is an ideal high-performance electronic component, widely used in power management, motor drive, load switch and automotive electronics.
1. **Power management**:
HM50N06KA-VB is suitable for high-efficiency switching elements in switching power supplies, especially as synchronous rectifiers in DC-DC converters, which can significantly reduce switching losses and improve power conversion efficiency.
2. **Motor drive**:
In motor control applications, this MOSFET can be used in the control circuit of brushless DC motors (BLDC) or stepper motors to provide high-speed and efficient current switching to ensure smooth operation of the motor.
3. **Load switch**:
The device can also be used in high-current load switches as the main switching element to provide reliable switching control for high-current loads in battery-powered devices and industrial automation systems.
4. **Automotive electronics**:
Due to its durability and high current handling capability, this MOSFET is suitable for use in power distribution modules in automotive electronics, such as electric power steering (EPS) and on-board chargers.
Through the combination of the above parameters and applications, HM50N06KA-VB MOSFET is an ideal high-performance electronic component, widely used in power management, motor drive, load switch and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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