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HM50N06IA-VB Product details
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Product Introduction
HM50N06IA-VB is a single N-channel MOSFET in TO252 package. The device has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It is designed with advanced trench technology, has excellent on-resistance performance, and can achieve high efficiency at low voltage. This MOSFET is very suitable for applications that require high switching speed and low conduction loss.
HM50N06IA-VB is a single N-channel MOSFET in TO252 package. The device has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It is designed with advanced trench technology, has excellent on-resistance performance, and can achieve high efficiency at low voltage. This MOSFET is very suitable for applications that require high switching speed and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 58A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 58A
- **Technology**: Trench
Domain and module applications：
Applications and modules
HM50N06IA-VB MOSFET is widely used in power management, DC-DC converters and motor drives where high efficiency and reliability are required. Due to its low on-resistance and high current carrying capacity, it is very suitable for:
1. **Automotive electronics**: such as electric power steering systems and battery management systems, ensuring low power consumption and high efficiency.
2. **Industrial control**: used in motor drive modules, providing fast switching speeds and low heat generation.
3. **Consumer electronics**: suitable for DC-DC converters and battery-powered devices, ensuring high efficiency and long battery life.
HM50N06IA-VB MOSFET is widely used in power management, DC-DC converters and motor drives where high efficiency and reliability are required. Due to its low on-resistance and high current carrying capacity, it is very suitable for:
1. **Automotive electronics**: such as electric power steering systems and battery management systems, ensuring low power consumption and high efficiency.
2. **Industrial control**: used in motor drive modules, providing fast switching speeds and low heat generation.
3. **Consumer electronics**: suitable for DC-DC converters and battery-powered devices, ensuring high efficiency and long battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
