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HM4N60BF-VB Product details
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Product Introduction
**HM4N60BF-VB** is a single N-channel MOSFET in a TO220F package, designed for high voltage applications. Its drain-source voltage (VDS) is 650V, suitable for applications requiring high voltage isolation and switching characteristics. The device's gate-source voltage (VGS) can withstand a maximum of ±30V, giving it good control performance over a wide gate voltage range. The HM4N60BF-VB uses planar structure technology, providing high stability and reliability, and is particularly suitable for working in harsh environments.
**HM4N60BF-VB** is a single N-channel MOSFET in a TO220F package, designed for high voltage applications. Its drain-source voltage (VDS) is 650V, suitable for applications requiring high voltage isolation and switching characteristics. The device's gate-source voltage (VGS) can withstand a maximum of ±30V, giving it good control performance over a wide gate voltage range. The HM4N60BF-VB uses planar structure technology, providing high stability and reliability, and is particularly suitable for working in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology type**: Planar
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation (Pd)**: 35W @ 25°C
- **Gate charge (Qg)**: 9nC @ VGS=10V, VDS=480V
- **Switching Speed**: Fast switching speed, suitable for high frequency applications
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology type**: Planar
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation (Pd)**: 35W @ 25°C
- **Gate charge (Qg)**: 9nC @ VGS=10V, VDS=480V
- **Switching Speed**: Fast switching speed, suitable for high frequency applications
Domain and module applications：
Applications and modules
**HM4N60BF-VB** has a wide range of applications in various high voltage and power conversion applications, including but not limited to the following areas:
1. **Power Management Module**: Due to its high withstand voltage characteristics and low on-resistance, this MOSFET is ideal for the high voltage output stage of a switching power supply (SMPS). These modules are typically used in industrial power supplies, server power supplies, and energy-efficient devices.
2. **Motor Driver**: The HM4N60BF-VB is able to operate stably at high voltages, making it an ideal choice for small power motor drive applications, especially those industrial equipment and household appliances that require long continuous operation.
3. **Power Inverter**: In renewable energy systems such as photovoltaic inverters or wind power generation, this MOSFET is used to convert DC to AC, ensuring efficient and reliable power conversion.
4. **Lighting Controller**: In high-voltage LED driver or dimmer circuits, the HM4N60BF-VB provides the necessary high-voltage switching capability, making it part of an efficient lighting system.
5. **Uninterruptible Power Supply (UPS)**: This MOSFET is used in UPS systems for efficient power conversion and battery management, ensuring that equipment can continue to operate during power outages.
The high voltage capability and reliable performance of the HM4N60BF-VB make it indispensable in a variety of high-voltage applications.
**HM4N60BF-VB** has a wide range of applications in various high voltage and power conversion applications, including but not limited to the following areas:
1. **Power Management Module**: Due to its high withstand voltage characteristics and low on-resistance, this MOSFET is ideal for the high voltage output stage of a switching power supply (SMPS). These modules are typically used in industrial power supplies, server power supplies, and energy-efficient devices.
2. **Motor Driver**: The HM4N60BF-VB is able to operate stably at high voltages, making it an ideal choice for small power motor drive applications, especially those industrial equipment and household appliances that require long continuous operation.
3. **Power Inverter**: In renewable energy systems such as photovoltaic inverters or wind power generation, this MOSFET is used to convert DC to AC, ensuring efficient and reliable power conversion.
4. **Lighting Controller**: In high-voltage LED driver or dimmer circuits, the HM4N60BF-VB provides the necessary high-voltage switching capability, making it part of an efficient lighting system.
5. **Uninterruptible Power Supply (UPS)**: This MOSFET is used in UPS systems for efficient power conversion and battery management, ensuring that equipment can continue to operate during power outages.
The high voltage capability and reliable performance of the HM4N60BF-VB make it indispensable in a variety of high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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