中文
English
HM4N10PR-VB Product details
Back to previous pageProduct introduction：
HM4N10PR-VB Product Introduction
The HM4N10PR-VB is a single N-channel MOSFET in a SOT89 package. With a drain-source voltage (VDS) rating of 100V and a gate-source voltage (VGS) rating of ±20V, this MOSFET is designed specifically for applications requiring medium and high voltage control. It has a threshold voltage (Vth) of 1.8V and a low on-resistance (RDS(ON)) of 125mΩ at a VGS of 4.5V and 102mΩ at a VGS of 10V. The product can withstand a drain current (ID) of up to 4.2A and uses Trench technology to ensure low losses and high performance during efficient switching operations.
The HM4N10PR-VB is a single N-channel MOSFET in a SOT89 package. With a drain-source voltage (VDS) rating of 100V and a gate-source voltage (VGS) rating of ±20V, this MOSFET is designed specifically for applications requiring medium and high voltage control. It has a threshold voltage (Vth) of 1.8V and a low on-resistance (RDS(ON)) of 125mΩ at a VGS of 4.5V and 102mΩ at a VGS of 10V. The product can withstand a drain current (ID) of up to 4.2A and uses Trench technology to ensure low losses and high performance during efficient switching operations.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | 102mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
HM4N10PR-VB Detailed parameter description
1. **Package type**: SOT89
- Compact package, suitable for high-density circuit design.
2. **Channel configuration**: Single N-channel
- Provides simple circuit design and control.
3. **Drain-source voltage (VDS)**: 100V
- Supports high-voltage applications and provides a wider range of applicability.
4. **Gate-source voltage (VGS)**: ±20V
- Ensures reliability under different level control.
5. **Threshold voltage (Vth)**: 1.8V
- Provides a flexible switching voltage range.
6. **On-resistance (RDS(ON))**:
- 125mΩ @ VGS=4.5V
- 102mΩ @ VGS=10V
- Lower on-resistance reduces power loss and improves efficiency.
7. **Drain current (ID)**: 4.2A
- Supports medium current applications.
8. **Technology type**: Trench
- Provides higher current density and switching speed.
1. **Package type**: SOT89
- Compact package, suitable for high-density circuit design.
2. **Channel configuration**: Single N-channel
- Provides simple circuit design and control.
3. **Drain-source voltage (VDS)**: 100V
- Supports high-voltage applications and provides a wider range of applicability.
4. **Gate-source voltage (VGS)**: ±20V
- Ensures reliability under different level control.
5. **Threshold voltage (Vth)**: 1.8V
- Provides a flexible switching voltage range.
6. **On-resistance (RDS(ON))**:
- 125mΩ @ VGS=4.5V
- 102mΩ @ VGS=10V
- Lower on-resistance reduces power loss and improves efficiency.
7. **Drain current (ID)**: 4.2A
- Supports medium current applications.
8. **Technology type**: Trench
- Provides higher current density and switching speed.
Domain and module applications：
HM4N10PR-VB Application Fields and Module Examples
HM4N10PR-VB MOSFET performs well in the following fields and modules:
1. **Power Management**: Applicable to the switching element in the DC-DC converter, which can effectively improve the power conversion efficiency.
2. **Motor Drive**: In the low-power motor control circuit, it can be used as a switching element to control the conduction of current and voltage.
3. **Load Switch**: In smart home devices, it is used as a load switch to control the switching state of small electric devices.
4. **LED Drive Circuit**: It can be used in LED lighting systems to help achieve constant current drive and improve system stability and efficiency.
5. **Industrial Control**: Applicable to relay replacement solutions in industrial automation equipment, which can quickly respond to control signals to ensure safe and stable operation of equipment.
HM4N10PR-VB, with its excellent performance parameters, is suitable for achieving efficient and stable power supply and signal control in these fields and modules.
HM4N10PR-VB MOSFET performs well in the following fields and modules:
1. **Power Management**: Applicable to the switching element in the DC-DC converter, which can effectively improve the power conversion efficiency.
2. **Motor Drive**: In the low-power motor control circuit, it can be used as a switching element to control the conduction of current and voltage.
3. **Load Switch**: In smart home devices, it is used as a load switch to control the switching state of small electric devices.
4. **LED Drive Circuit**: It can be used in LED lighting systems to help achieve constant current drive and improve system stability and efficiency.
5. **Industrial Control**: Applicable to relay replacement solutions in industrial automation equipment, which can quickly respond to control signals to ensure safe and stable operation of equipment.
HM4N10PR-VB, with its excellent performance parameters, is suitable for achieving efficient and stable power supply and signal control in these fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
