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HM40N04K-VB Product details
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HM40N04K-VB MOSFET Product Introduction
**HM40N04K-VB** is a high-performance N-channel MOSFET packaged in TO252. This MOSFET provides a drain-source withstand voltage of 40V and a drain current capability of 55A. Using Trench technology, this MOSFET has excellent conduction performance and low on-resistance, making it perform well in applications with higher switching frequencies. It is suitable for power switch and load switch applications that require high current and low resistance, and is an ideal choice for high-efficiency circuit design.
**HM40N04K-VB** is a high-performance N-channel MOSFET packaged in TO252. This MOSFET provides a drain-source withstand voltage of 40V and a drain current capability of 55A. Using Trench technology, this MOSFET has excellent conduction performance and low on-resistance, making it perform well in applications with higher switching frequencies. It is suitable for power switch and load switch applications that require high current and low resistance, and is an ideal choice for high-efficiency circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HM40N04K-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 55A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 55A
- **Technology type**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Switch**: The low on-resistance of the HM40N04K-VB makes it an excellent choice for power switch applications. For example, using this MOSFET in a DC-DC converter can improve efficiency and reduce power loss, thereby improving overall system performance.
2. **Load Switch**: Due to its high current handling capability and low on-resistance, the HM40N04K-VB is well suited for use as a load switch. It can effectively control current flow in high current loads and ensure stable switching performance.
3. **Motor Drive**: In motor drive applications, the high current capability and low on-resistance of this MOSFET enable it to handle high current loads, providing smooth motor control and efficient drive performance.
4. **Switching Power Supply**: In switching power supply designs, the HM40N04K-VB can be used as a main switch or synchronous rectifier, and its low on-resistance helps reduce switching losses and improve overall efficiency.
The excellent conduction performance and high current handling capability of the HM40N04K-VB MOSFET make it excel in high current applications such as power switching, load switching, motor drives, and switching power supplies.
1. **Power Switch**: The low on-resistance of the HM40N04K-VB makes it an excellent choice for power switch applications. For example, using this MOSFET in a DC-DC converter can improve efficiency and reduce power loss, thereby improving overall system performance.
2. **Load Switch**: Due to its high current handling capability and low on-resistance, the HM40N04K-VB is well suited for use as a load switch. It can effectively control current flow in high current loads and ensure stable switching performance.
3. **Motor Drive**: In motor drive applications, the high current capability and low on-resistance of this MOSFET enable it to handle high current loads, providing smooth motor control and efficient drive performance.
4. **Switching Power Supply**: In switching power supply designs, the HM40N04K-VB can be used as a main switch or synchronous rectifier, and its low on-resistance helps reduce switching losses and improve overall efficiency.
The excellent conduction performance and high current handling capability of the HM40N04K-VB MOSFET make it excel in high current applications such as power switching, load switching, motor drives, and switching power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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