HM3N70L-VB Product details
Product introduction:
HM3N70L-VB is a single-channel N-type MOSFET with a TO251 package type, designed for high voltage applications. Its drain-source breakdown voltage (VDS) is as high as 700V, making it suitable for high voltage power supplies and switching applications. The gate-source voltage range of this MOSFET is ±30V, ensuring a wide range of application flexibility. Its threshold voltage (Vth) is 3.5V, allowing it to be effectively turned on at a relatively low gate voltage. The on-resistance (RDS(ON)) of HM3N70L-VB is 2400mΩ (at VGS of 10V), which is suitable for medium power applications. The maximum drain current (ID) is 2A, which is suitable for high voltage applications that require relatively small current handling. The use of SJ_Multi-EPI technology ensures the stability and reliability of the MOSFET in a high voltage environment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Channel configuration**: Single N type
- **Drain-source breakdown voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
**1. High-voltage power converters **
HM3N70L-VB is very suitable in high-voltage power converters because its high drain-source breakdown voltage (700V) can handle high voltage inputs, and its relatively high on-resistance is suitable for medium power requirements. This enables it to operate stably in high-voltage environments and perform efficient voltage conversion and control.
**2. Motor drive systems **
In motor drive systems, HM3N70L-VB can be used in high-voltage control applications, such as high-voltage starting or protection circuits for motors. Its high breakdown voltage and large gate-source voltage range enable it to effectively cope with the high voltage spikes generated when the motor starts, while handling medium currents during motor operation.
**3. High-voltage switches **
HM3N70L-VB is suitable for high-voltage switching applications, such as the high-voltage switching part of a switching power supply. Its high drain-source breakdown voltage (700V) enables it to safely switch high voltage circuits, while its technology and parameters enable it to maintain stable performance in these high voltage applications.
**4. Electronic protection and control circuits**
In applications where high voltage circuits need to be protected, the high voltage withstand capability of the HM3N70L-VB makes it very suitable. It can be used as a switch or control element in a protection circuit, ensuring reliable protection functions in high voltage environments while handling moderate current loads.
The HM3N70L-VB is suitable for multiple high voltage applications, including power converters, motor drives, high voltage switches, and electronic protection circuits, through its high voltage withstand capability and reliable medium current handling capability, providing a stable and efficient solution in high voltage environments.
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