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HM3N40R-VB Product details
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HM3N40R-VB MOSFET Product Introduction
**HM3N40R-VB** is a high voltage single N-channel MOSFET with SOT223 package type, suitable for applications requiring high voltage resistance and medium current handling. This MOSFET has a drain-source voltage (VDS) withstand capability of 650V, a gate-source voltage (VGS) withstand range of ±30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 2000mΩ at VGS=10V, and the maximum drain current (ID) is 4A. HM3N40R-VB uses Plannar technology, providing good switching performance and reliability.
**HM3N40R-VB** is a high voltage single N-channel MOSFET with SOT223 package type, suitable for applications requiring high voltage resistance and medium current handling. This MOSFET has a drain-source voltage (VDS) withstand capability of 650V, a gate-source voltage (VGS) withstand range of ±30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 2000mΩ at VGS=10V, and the maximum drain current (ID) is 4A. HM3N40R-VB uses Plannar technology, providing good switching performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 4A | 2000mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
HM3N40R-VB Detailed parameter description
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2500mΩ @ VGS=4.5V
- 2000mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology**: Plannar
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2500mΩ @ VGS=4.5V
- 2000mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
The high withstand voltage characteristics and moderate current handling capability of HM3N40R-VB MOSFET make it widely used in multiple fields and modules:
1. **High voltage switching circuit**: Due to its drain-source voltage tolerance of up to 650V, HM3N40R-VB is suitable for use in high voltage switching circuits, such as high voltage power management and power switch modules, to ensure stable and reliable switching operation under high voltage conditions.
2. **Power protection circuit**: In the power protection circuit, this MOSFET can be used as an overvoltage protection switch to prevent the power supply voltage from exceeding the safe range, thereby protecting downstream circuits and equipment from damage.
3. **Power adapter**: In the power adapter, HM3N40R-VB can be used to switch and control the conversion of high voltage power, helping to achieve efficient power conversion and stable output.
4. **Lighting Control**: In lighting control modules, especially those applications that require high voltage drive, such as high voltage LED lamps or industrial lighting systems, the high voltage tolerance of HM3N40R-VB makes it an ideal choice.
5. **Power Converters**: This MOSFET can be used in high voltage power converters, such as AC-DC converters and DC-DC converters, providing stable switching performance and effective current management.
6. **Power Regulation Module**: In power regulation modules, HM3N40R-VB is able to effectively manage and regulate high voltage power supplies, suitable for applications that require high voltage control and regulation.
With its high voltage tolerance and good switching performance, HM3N40R-VB is a reliable choice in high voltage applications, capable of providing stable and efficient performance.
The high withstand voltage characteristics and moderate current handling capability of HM3N40R-VB MOSFET make it widely used in multiple fields and modules:
1. **High voltage switching circuit**: Due to its drain-source voltage tolerance of up to 650V, HM3N40R-VB is suitable for use in high voltage switching circuits, such as high voltage power management and power switch modules, to ensure stable and reliable switching operation under high voltage conditions.
2. **Power protection circuit**: In the power protection circuit, this MOSFET can be used as an overvoltage protection switch to prevent the power supply voltage from exceeding the safe range, thereby protecting downstream circuits and equipment from damage.
3. **Power adapter**: In the power adapter, HM3N40R-VB can be used to switch and control the conversion of high voltage power, helping to achieve efficient power conversion and stable output.
4. **Lighting Control**: In lighting control modules, especially those applications that require high voltage drive, such as high voltage LED lamps or industrial lighting systems, the high voltage tolerance of HM3N40R-VB makes it an ideal choice.
5. **Power Converters**: This MOSFET can be used in high voltage power converters, such as AC-DC converters and DC-DC converters, providing stable switching performance and effective current management.
6. **Power Regulation Module**: In power regulation modules, HM3N40R-VB is able to effectively manage and regulate high voltage power supplies, suitable for applications that require high voltage control and regulation.
With its high voltage tolerance and good switching performance, HM3N40R-VB is a reliable choice in high voltage applications, capable of providing stable and efficient performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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