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HM3N25R-VB Product details
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HM3N25R-VB MOSFET Product Introduction
HM3N25R-VB is a single N-channel MOSFET designed in SOT223 package with a maximum drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V. The turn-on threshold voltage (Vth) of this MOSFET is 3V, and it uses Trench technology, which has good switching characteristics and stability. Its on-resistance (RDS(ON)) is 2000mΩ at VGS=10V, and the drain current (ID) can reach 0.79A. This MOSFET is suitable for small and medium power applications that require high voltage resistance, and its compact SOT223 package makes it suitable for use in space-constrained electronic devices.
HM3N25R-VB is a single N-channel MOSFET designed in SOT223 package with a maximum drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V. The turn-on threshold voltage (Vth) of this MOSFET is 3V, and it uses Trench technology, which has good switching characteristics and stability. Its on-resistance (RDS(ON)) is 2000mΩ at VGS=10V, and the drain current (ID) can reach 0.79A. This MOSFET is suitable for small and medium power applications that require high voltage resistance, and its compact SOT223 package makes it suitable for use in space-constrained electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
HM3N25R-VB MOSFET Detailed parameter description
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2000mΩ @ VGS=10V
- **Drain current (ID)**: 0.79A
- **Technology**: Trench
- **Switching characteristics**: Good switching characteristics, suitable for small and medium power applications
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2000mΩ @ VGS=10V
- **Drain current (ID)**: 0.79A
- **Technology**: Trench
- **Switching characteristics**: Good switching characteristics, suitable for small and medium power applications
Domain and module applications：
HM3N25R-VB MOSFET Application Fields and Modules
The design features and performance of the HM3N25R-VB MOSFET enable it to excel in multiple application fields:
1. **Power Management Circuit**: Due to its high withstand voltage characteristics, the HM3N25R-VB is suitable for small and medium power power management circuits, such as switching power supplies and regulated power supplies. In these applications, the MOSFET is able to handle higher voltages while ensuring stable current control.
2. **Load Switch**: In applications where medium current loads need to be switched or controlled, the HM3N25R-VB provides reliable switching performance. Its high withstand voltage and moderate on-resistance make it a suitable choice for load switching circuits, such as battery management and power distribution systems.
3. **Motor Drive**: This MOSFET is suitable for applications driving small motors or stepper motors, especially when it is necessary to handle higher voltages and medium currents. Its high withstand voltage capability and stable performance ensure reliable operation of the motor.
4. **LED drive circuit**: In LED lighting applications, the HM3N25R-VB can be used as a switching element to control the current of LED lamps. Although its current capability is relatively low, its high withstand voltage makes it suitable for use in high-voltage LED drive systems.
5. **Battery protection circuit**: In battery protection and management systems, this MOSFET can be used for switching control and overvoltage protection of batteries. Its high withstand voltage and stability help improve the safety and reliability of battery systems.
6. **Small appliances and consumer electronics**: The HM3N25R-VB is suitable for switching and protection circuits in small appliances and consumer electronics, especially in scenarios that require high withstand voltage and medium current.
With its excellent withstand voltage and switching performance, the HM3N25R-VB MOSFET shows strong applicability in small and medium power applications and is an ideal choice for efficient and reliable power management.
The design features and performance of the HM3N25R-VB MOSFET enable it to excel in multiple application fields:
1. **Power Management Circuit**: Due to its high withstand voltage characteristics, the HM3N25R-VB is suitable for small and medium power power management circuits, such as switching power supplies and regulated power supplies. In these applications, the MOSFET is able to handle higher voltages while ensuring stable current control.
2. **Load Switch**: In applications where medium current loads need to be switched or controlled, the HM3N25R-VB provides reliable switching performance. Its high withstand voltage and moderate on-resistance make it a suitable choice for load switching circuits, such as battery management and power distribution systems.
3. **Motor Drive**: This MOSFET is suitable for applications driving small motors or stepper motors, especially when it is necessary to handle higher voltages and medium currents. Its high withstand voltage capability and stable performance ensure reliable operation of the motor.
4. **LED drive circuit**: In LED lighting applications, the HM3N25R-VB can be used as a switching element to control the current of LED lamps. Although its current capability is relatively low, its high withstand voltage makes it suitable for use in high-voltage LED drive systems.
5. **Battery protection circuit**: In battery protection and management systems, this MOSFET can be used for switching control and overvoltage protection of batteries. Its high withstand voltage and stability help improve the safety and reliability of battery systems.
6. **Small appliances and consumer electronics**: The HM3N25R-VB is suitable for switching and protection circuits in small appliances and consumer electronics, especially in scenarios that require high withstand voltage and medium current.
With its excellent withstand voltage and switching performance, the HM3N25R-VB MOSFET shows strong applicability in small and medium power applications and is an ideal choice for efficient and reliable power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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