中文
English
HM3N25K-VB Product details
Back to previous pageProduct introduction：
1. HM3N25K-VB Product Introduction
HM3N25K-VB is a high-performance N-channel MOSFET in TO252 package. This MOSFET is designed for applications that require high voltage handling and high reliability. Its drain-source voltage (VDS) can reach 250V and the gate voltage (VGS) is ±20V. The threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 640mΩ at VGS=10V, and the maximum drain current (ID) is 4.5A. HM3N25K-VB uses Trench technology to optimize its performance, reduce power consumption and increase switching speed.
HM3N25K-VB is a high-performance N-channel MOSFET in TO252 package. This MOSFET is designed for applications that require high voltage handling and high reliability. Its drain-source voltage (VDS) can reach 250V and the gate voltage (VGS) is ±20V. The threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 640mΩ at VGS=10V, and the maximum drain current (ID) is 4.5A. HM3N25K-VB uses Trench technology to optimize its performance, reduce power consumption and increase switching speed.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HM3N25K-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4.5A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Package form**: TO252
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4.5A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Package form**: TO252
Domain and module applications：
3. Application fields and module examples
The design of HM3N25K-VB makes it suitable for a variety of high voltage and medium current applications. The following are some typical application fields and modules:
- **High voltage switching power supply**: Due to its high drain-source voltage (250V) and low on-resistance (640mΩ), HM3N25K-VB is very suitable for use in high voltage switching power supplies, helping to improve power conversion efficiency and reduce energy losses.
- **Electric vehicle (EV) control system**: In the battery management system and motor drive control of electric vehicles, this MOSFET is able to handle higher voltage requirements and provide reliable performance under demanding environmental conditions.
- **Industrial power module**: In various industrial applications, such as motor control and power converters, HM3N25K-VB can be used to control high voltage current, suitable for application scenarios that require high voltage resistance and high stability.
- **Power Inverters**: Suitable for solar inverters and other power inverters, providing high voltage support and efficient switching performance, helping to improve the overall efficiency and stability of the system.
- **Consumer Electronics**: In high-voltage DC power supplies and protection circuits, HM3N25K-VB can provide reliable switching performance and is suitable for consumer electronics that require high voltage resistance and high efficiency.
Through these application areas, HM3N25K-VB can play a key role in multiple high-voltage and medium-current electronic power management systems, improving system performance and reliability.
The design of HM3N25K-VB makes it suitable for a variety of high voltage and medium current applications. The following are some typical application fields and modules:
- **High voltage switching power supply**: Due to its high drain-source voltage (250V) and low on-resistance (640mΩ), HM3N25K-VB is very suitable for use in high voltage switching power supplies, helping to improve power conversion efficiency and reduce energy losses.
- **Electric vehicle (EV) control system**: In the battery management system and motor drive control of electric vehicles, this MOSFET is able to handle higher voltage requirements and provide reliable performance under demanding environmental conditions.
- **Industrial power module**: In various industrial applications, such as motor control and power converters, HM3N25K-VB can be used to control high voltage current, suitable for application scenarios that require high voltage resistance and high stability.
- **Power Inverters**: Suitable for solar inverters and other power inverters, providing high voltage support and efficient switching performance, helping to improve the overall efficiency and stability of the system.
- **Consumer Electronics**: In high-voltage DC power supplies and protection circuits, HM3N25K-VB can provide reliable switching performance and is suitable for consumer electronics that require high voltage resistance and high efficiency.
Through these application areas, HM3N25K-VB can play a key role in multiple high-voltage and medium-current electronic power management systems, improving system performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
