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HM35N03Q-VB Product details

Product introduction:

HM35N03Q-VB MOSFET Product Introduction

HM35N03Q-VB is a high-efficiency single N-channel MOSFET with a compact DFN8 (3X3) package design, suitable for space-constrained applications. The device has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and its turn-on threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) of HM35N03Q-VB is 5mΩ at VGS=4.5V and 3.9mΩ at VGS=10V, and the maximum drain current (ID) can reach 60A. Based on advanced Trench technology, this MOSFET provides extremely low on-resistance and excellent switching performance, which is very suitable for efficient power management and low-voltage drive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 60A 3.9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
HM35N03Q-VB MOSFET detailed parameter description

- **Package**: DFN8 (3X3)
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS=4.5V
- 3.9mΩ @ VGS=10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
- **Switching characteristics**: High efficiency and low voltage drive, suitable for compact design

Domain and module applications:

HM35N03Q-VB MOSFET Application Fields and Modules

The compact package and high performance characteristics of HM35N03Q-VB MOSFET make it play an important role in a variety of applications:

1. **Portable Device Power Management**: Due to its low on-resistance and high current capability, this MOSFET is very suitable for use in power management circuits of portable devices such as smartphones, tablets, and laptops. Its compact DFN8 package helps save PCB space while maintaining high efficiency.

2. **Power Conversion Module**: In low-voltage DC-DC converters and voltage regulators, HM35N03Q-VB provides efficient power conversion and low losses, suitable for power modules that require high efficiency and small size.

3. **Motor Drive Circuit**: Its high current handling capability makes it suitable for small motor drives, especially in small motor and servo systems where space is limited but efficient drive is required.

4. **Load switch and power distribution circuit**: HM35N03Q-VB can be used in load switches and power distribution circuits that require precise control to ensure low power consumption and efficient power management. It is suitable for use in devices that require efficient load management, such as servers and routers.

5. **Battery protection circuit**: In battery management systems, this MOSFET can be used as a switching element for battery charging and discharging management. Its low on-resistance and high current capability help improve the efficiency and safety of battery systems.

6. **LED drive circuit**: This MOSFET is suitable for use in drive circuits in LED lighting systems. It can provide efficient current control and low power consumption, supporting long-term stable operation of LED lamps.

HM35N03Q-VB MOSFET is an ideal choice for efficient power management and low-voltage and high-current applications. Its compact package and high-performance characteristics make it an important choice in modern electronic devices with limited space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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