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HM3207D-VB Product details

Product introduction:

HM3207D-VB MOSFET Product Introduction

**HM3207D-VB** is a high-performance N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. This MOSFET uses Trench technology and has a drain-source withstand voltage of 80V, suitable for medium voltage applications. Its on-resistance is 3.1mΩ at VGS=10V, and its drain current capability is up to 230A, which can provide stable performance in high current environments. The threshold voltage is 3V, ensuring reliable switching at standard gate voltages.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 230A 3.1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 230A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 230A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N

HM3207D-VB MOSFET Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.1mΩ @ VGS=10V
- **Drain current (ID)**: 230A
- **Technology type**: Trench

Domain and module applications:

Applications and module examples

1. **High power switch**: The low on-resistance and high drain current capability of the HM3207D-VB make it ideal for high power switching applications. It can be used as a power switch or load switch to provide efficient switching control in the power transmission system, reduce power loss and improve the overall system efficiency.

2. **Electric vehicle power management**: In the power management system of electric vehicles, the HM3207D-VB can be used as a switching element for battery management and motor drive. Its high current carrying capacity and low on-resistance ensure efficient control and protection of batteries and motors in electric vehicles.

3. **DC-DC converter**: This MOSFET is suitable for DC-DC converters as the main switching component for voltage conversion. Its ultra-low on-resistance helps reduce power consumption during the conversion process and improve conversion efficiency, making it suitable for high power power module and converter design.

4. **Power Management IC**: HM3207D-VB can be used as the main switching element in the power management IC to provide control of high current loads. Its high current capability and low on-resistance enable it to play a key role in the power management module to ensure the stability and reliability of the system.

With its excellent high current handling capability and low on-resistance, HM3207D-VB MOSFET is widely used in applications such as high power switching, electric vehicle power management, DC-DC converters and power management ICs, providing an ideal solution for scenarios with high current and high efficiency requirements.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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