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HM30P02K-VB Product details
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HM30P02K-VB MOSFET Product Introduction
HM30P02K-VB is a high-performance single P-channel MOSFET in TO252 package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and the gate-source voltage (VGS) range is ±20V. Its turn-on threshold voltage (Vth) is -1.7V, the on-resistance (RDS(ON)) is 46mΩ at VGS=4.5V, 33mΩ at VGS=10V, and the maximum drain current (ID) is -38A. HM30P02K-VB uses Trench technology, with low on-resistance and high current handling capability, suitable for a variety of low voltage and high current switching applications.
HM30P02K-VB is a high-performance single P-channel MOSFET in TO252 package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and the gate-source voltage (VGS) range is ±20V. Its turn-on threshold voltage (Vth) is -1.7V, the on-resistance (RDS(ON)) is 46mΩ at VGS=4.5V, 33mΩ at VGS=10V, and the maximum drain current (ID) is -38A. HM30P02K-VB uses Trench technology, with low on-resistance and high current handling capability, suitable for a variety of low voltage and high current switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
HM30P02K-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 46mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 33mΩ @ VGS=10V
- **Drain current (ID)**: -38A
- **Technology**: Trench
- **Switching characteristics**: Suitable for low voltage and high current switching applications
- **Package**: TO252, suitable for applications requiring higher power and heat dissipation
- **Package**: TO252
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 46mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 33mΩ @ VGS=10V
- **Drain current (ID)**: -38A
- **Technology**: Trench
- **Switching characteristics**: Suitable for low voltage and high current switching applications
- **Package**: TO252, suitable for applications requiring higher power and heat dissipation
Domain and module applications：
HM30P02K-VB MOSFET Applicable Fields and Modules
The design features of HM30P02K-VB MOSFET make it excel in multiple fields and modules:
1. **Power Management**: Due to its low on-resistance and high current handling capability, HM30P02K-VB is very suitable for power management systems such as DC-DC converters and power switches. It can effectively manage low voltage and high current switching control to improve system efficiency.
2. **Automotive Electronics**: In automotive electronic systems, this MOSFET can be used in applications such as on-board power modules, lighting controls, and electric windows. Its high current handling capability and low power consumption make it a reliable switching component in automotive electrical systems.
3. **Power Tools**: HM30P02K-VB can be used for power management and motor drive applications in power tools. Its low on-resistance and high current capability ensure stable operation of power tools under high loads.
4. **LED drive circuit**: In the LED drive circuit, HM30P02K-VB can be used as a switch control to ensure stable and efficient driving of LEDs. Its low on-resistance helps reduce power consumption and improve brightness stability.
5. **Load switch**: This MOSFET is also suitable for various load switch applications, such as battery switches, power switches, and protection circuits. Its high current capability and compact TO252 package make it excellent in applications that require high power and good heat dissipation.
With its low voltage and high current characteristics, HM30P02K-VB MOSFET is suitable for a variety of applications that require efficient switching and power management, especially in low voltage and high current situations.
The design features of HM30P02K-VB MOSFET make it excel in multiple fields and modules:
1. **Power Management**: Due to its low on-resistance and high current handling capability, HM30P02K-VB is very suitable for power management systems such as DC-DC converters and power switches. It can effectively manage low voltage and high current switching control to improve system efficiency.
2. **Automotive Electronics**: In automotive electronic systems, this MOSFET can be used in applications such as on-board power modules, lighting controls, and electric windows. Its high current handling capability and low power consumption make it a reliable switching component in automotive electrical systems.
3. **Power Tools**: HM30P02K-VB can be used for power management and motor drive applications in power tools. Its low on-resistance and high current capability ensure stable operation of power tools under high loads.
4. **LED drive circuit**: In the LED drive circuit, HM30P02K-VB can be used as a switch control to ensure stable and efficient driving of LEDs. Its low on-resistance helps reduce power consumption and improve brightness stability.
5. **Load switch**: This MOSFET is also suitable for various load switch applications, such as battery switches, power switches, and protection circuits. Its high current capability and compact TO252 package make it excellent in applications that require high power and good heat dissipation.
With its low voltage and high current characteristics, HM30P02K-VB MOSFET is suitable for a variety of applications that require efficient switching and power management, especially in low voltage and high current situations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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