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HM30N04Q-VB Product details

Product introduction:

1. HM30N04Q-VB Product Introduction

HM30N04Q-VB is a high-performance N-channel MOSFET in DFN8 (3X3) package. The MOSFET is designed with a high voltage withstand capability (VDS) of 40V and supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.5V, allowing it to be turned on at a lower gate voltage. HM30N04Q-VB uses Trench technology to provide low on-resistance (RDS(ON)) - 6mΩ at VGS=4.5V and 4.5mΩ at VGS=10V. Its maximum drain current (ID) is 40A. These features enable HM30N04Q-VB to perform well in applications requiring high efficiency and low on-resistance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 40V 2.5V 40A 4.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 40V 2.5V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 40V 2.5V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
II. Detailed parameter description of HM30N04Q-VB

1. **Package type**: DFN8(3X3)
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 40A
8. **Technology type**: Trench
9. **Maximum power dissipation (Ptot)**: 2.5W
10. **Operating temperature range**: -55°C to +150°C
11. **Input capacitance (Ciss)**: 2000pF
12. **Output capacitance (Coss)**: 300pF
13. **Reverse recovery time (trr)**: 30ns

Domain and module applications:

3. Application fields and modules of HM30N04Q-VB

The high current carrying capacity and low on-resistance of HM30N04Q-VB make it excel in various high-efficiency and high-current applications. Here are some typical application fields and modules:

1. **DC-DC converter**:
- **Application examples**: In DC-DC converters, HM30N04Q-VB can be used as a switching element to handle high current and high power conversion. Its low on-resistance and high current handling capability can improve the efficiency and stability of the converter.

2. **Power management**:
- **Application examples**: In power management modules such as power distribution networks (PDNs) and battery management systems, HM30N04Q-VB can be used for switching and current control to ensure efficient operation of the system and stable supply of power.

3. **Electric Vehicle**:
- **Application Examples**: In electric vehicles, HM30N04Q-VB is suitable for motor drive and battery management systems, which require high current switching and low on-resistance to ensure efficient and reliable operation of electric vehicles.

4. **Power Amplifier**:
- **Application Examples**: In power amplifiers, this MOSFET can be used for efficient power switching and amplifier control, improving the power transmission efficiency and signal stability of the system.

5. **Load Switch**:
- **Application Examples**: In load switch applications, HM30N04Q-VB can control the switching state of the load, ensuring stable operation of high current loads while reducing power loss and heat generation.

The high conductivity and low power consumption characteristics of HM30N04Q-VB enable it to provide excellent performance in these fields, suitable for a variety of application scenarios requiring high efficiency and low energy consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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